1/26/2021 | 32065010 | # & Substance emitting 3010725.NVL POSP_SM-4_BREE used in production of light emitting diodes (TP: Aluminum oxide (Al2O3), yttrium oxide (Y2O3), Lutetium Oxide (Lu2O3); Digadolinium trioxide (Gd2O3), cerium dioxide (CeO2) ) | 2000 | GRM | 1042 | China | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA | Get Detailed Shipment Records
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1/26/2021 | 32065010 | # & Substance emitting 3010727.NVL POSP_SM-SX 2_BREE used in light emitting diodes (TP: Aluminum oxide-CAS: 1344-28-1; yttrium oxide-CAS: 1314-36-9; Lutetium oxide-CAS: 12032-20 -1; cerium dioxide-CAS: 1306-38-3) | 1000 | GRM | 438.1 | China | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/26/2021 | 32065010 | # & Substance emitting 3008599.NVL pOSP GNYAG3657 used in production of light emitting diodes (Composition: Aluminum Gallium Yttrium Cerium Oxide) | 15000 | GRM | 945 | United States of America | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/7/2021 | 32065010 | 1012945.NVL # & Substance emitting FILM_PIS_1470 COOL F Film (TP main alpha-alumina, yttrium oxide, cerium oxide, aluminum nitride, Europium oxide, gadolinium oxide; Trisilicone tetranitride) | 1505667 | PCE | 21305.19 | South Korea | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/5/2021 | 32065010 | 3010959.NVL # & Substance emitting diodes used in the production POSP_GNYAG4056 luminescent (TP contains: Aluminum Gallium Yttrium Cerium Oxide) | 5000 | GRM | 285 | United States of America | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/23/2021 | 32065010 | # & Substance emitting 3008599.NVL pOSP GNYAG3657 used in production of light emitting diodes (Composition: Aluminum Gallium Yttrium Cerium Oxide) | 30000 | GRM | 1890 | United States of America | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/26/2021 | 32065010 | # & Substance emitting 3010726.NVL POSP_SM-3A_BREE used in production of light emitting diodes (TP contains: Aluminum oxide (Al2O3), yttrium oxide (Y2O3), Lutetium Oxide (Lu2O3), cerium dioxide (CeO2)) | 5000 | GRM | 1989.5 | China | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/13/2021 | 32065010 | 3012173.NVL # & Substance emitting diodes used in the production POSP_SDY565-07 luminescent (TP contain: yttrium oxide - CAS: 1314-36-9; Aluminum oxide - CAS: 1344-28-1; Cerium oxide - CAS: 1306 -38-3) | 1000 | GRM | 125.84 | South Korea | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/9/2021 | 32065010 | # & Substance emitting 3012141.NVL POSP_YM545C SX used in light emitting diodes (TP: Aluminum oxide-CAS: 1344-28-1; yttrium oxide-CAS: 1314-36-9; Digallium trioxide-CAS: 12024-21-4; cerium dioxide-CAS: 1306-38-3) | 600 | GRM | 368.16 | South Korea | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/2/2021 | 32065010 | # & Substance emitting 3003503.NVL pOSP PF-Y44W used in production of light emitting diodes (chemical name: Yttrium Aluminum Oxide - CAS: 12005-21-9), 100% | 2000 | GRM | 1153.6 | South Korea | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |