1/26/2021 | 32065010 | # & Substance emitting 3010725.NVL POSP_SM-4_BREE used in production of light emitting diodes (TP: Aluminum oxide (Al2O3), yttrium oxide (Y2O3), Lutetium Oxide (Lu2O3); Digadolinium trioxide (Gd2O3), cerium dioxide (CeO2) ) | 2000 | GRM | 1042 | China | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA | Get Detailed Shipment Records
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1/26/2021 | 32065010 | # & Substance emitting 3010727.NVL POSP_SM-SX 2_BREE used in light emitting diodes (TP: Aluminum oxide-CAS: 1344-28-1; yttrium oxide-CAS: 1314-36-9; Lutetium oxide-CAS: 12032-20 -1; cerium dioxide-CAS: 1306-38-3) | 1000 | GRM | 438.1 | China | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/26/2021 | 32065010 | # & Substance emitting 3010726.NVL POSP_SM-3A_BREE used in production of light emitting diodes (TP contains: Aluminum oxide (Al2O3), yttrium oxide (Y2O3), Lutetium Oxide (Lu2O3), cerium dioxide (CeO2)) | 5000 | GRM | 1989.5 | China | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/26/2021 | 32065010 | # & Substance emitting 3010730.NVL POSP_SM-6_BREE used in production of light emitting diodes (TP: Aluminum oxide (Al2O3), yttrium oxide (Y2O3), Lutetium Oxide (Lu2O3); Digadolinium trioxide (Gd2O3), cerium dioxide (CeO2) ) | 2000 | GRM | 772.8 | China | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |