1/26/2021 | 32065010 | # & Substance emitting 3008599.NVL pOSP GNYAG3657 used in production of light emitting diodes (Composition: Aluminum Gallium Yttrium Cerium Oxide) | 15000 | GRM | 945 | United States of America | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA | Get Detailed Shipment Records
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1/5/2021 | 32065010 | 3010959.NVL # & Substance emitting diodes used in the production POSP_GNYAG4056 luminescent (TP contains: Aluminum Gallium Yttrium Cerium Oxide) | 5000 | GRM | 285 | United States of America | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/23/2021 | 32065010 | # & Substance emitting 3008599.NVL pOSP GNYAG3657 used in production of light emitting diodes (Composition: Aluminum Gallium Yttrium Cerium Oxide) | 30000 | GRM | 1890 | United States of America | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/23/2021 | 32065010 | 3010959.NVL # & Substance emitting diodes used in the production POSP_GNYAG4056 luminescent (TP contains: Aluminum Gallium Yttrium Cerium Oxide) | 5000 | GRM | 315 | United States of America | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/5/2021 | 32065010 | # & Substance emitting 3008599.NVL pOSP GNYAG3657 used in production of light emitting diodes (Composition: Aluminum Gallium Yttrium Cerium Oxide) | 10000 | GRM | 570 | United States of America | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |
1/14/2021 | 32065010 | # & Substance emitting 3008599.NVL pOSP GNYAG3657 used in production of light emitting diodes (Composition: Aluminum Gallium Yttrium Cerium Oxide) | 10000 | GRM | 630 | United States of America | HA NOI | CôNG TY TNHH SEOUL SEMICONDUCTOR VINA |