3/30/2024 | 85423200 | 201NFZT65#&Nand Flash Memory, 2010020004411075, 1Gbit,2.7~3.6V,TSOP48,32nm, 100% new | SHENZHEN TONGWEI COMMUNICATION TECHNOLOGY COLTD | 960 | PCE | 630.24 | South Korea | NA |
3/30/2024 | 85423200 | 201NFZT64#&Nor Flash Memory, 2010020005391087, 64Mbit,2.7~3.6V,SOIC8-208mil,58nm,EF4017,Tray, 100% new | SHENZHEN TONGWEI COMMUNICATION TECHNOLOGY COLTD | 4800 | PCE | 794.88 | Taiwan | NA |
3/30/2024 | 85423200 | 1107-002768#&IC-NOR FLASH;EN25Q40B-104HIP2X,SOP,8P,TP / IC (MEMORY) | SAMSUNG ELECTRONICS HCMC CE COMPLEX CO LTD | 2000 | PCE | 128.6 | Taiwan | NA |
3/30/2024 | 85423200 | 201EFZT65#&Emmc Flash Memory, 2010020014883324, 4GB,2.7~3.6V,FBGA-153,Tray, 100% new | SHENZHEN TONGWEI COMMUNICATION TECHNOLOGY COLTD | 1661 | PCE | 3187.6251 | South Korea | NA |
3/30/2024 | 85423200 | 201NFZT65#&Nand Flash Memory, 2010020009791669, 4Gbit,2.7~3.6V,TSOP48,25nm, 100% new | SHENZHEN GONGJIN ELECTRONICS CO LTD | 500 | PCE | 872.25 | China | NA |
3/30/2024 | 85423200 | 201EFZT65#&Emmc Flash Memory, 2010020014883324, 4GB,2.7~3.6V,FBGA-153,Tray, 100% new | SHENZHEN TONGWEI COMMUNICATION TECHNOLOGY COLTD | 3 | PCE | 6.4476 | South Korea | NA |
3/30/2024 | 85423200 | 201NFZT65#&Nand Flash Memory, 2010020002781669, 1Gbit,2.7~3.6V,TSOP48,34nm,2CF1,4bit ECC,Tray, 100% new | SHENZHEN GONGJIN ELECTRONICS CO LTD | 341 | PCE | 317.7779 | Taiwan | NA |
3/30/2024 | 85423200 | 201NFZT64#&Nor Flash Memory, 2010020005391087, 64Mbit,2.7~3.6V,SOIC8-208mil,58nm,EF4017,Tray, 100% new | SHENZHEN TONGWEI COMMUNICATION TECHNOLOGY COLTD | 9600 | PCE | 1409.28 | Taiwan | NA |
3/30/2024 | 85423200 | 201NFZT64#&Nor Flash Memory, 2010020005391087, 64Mbit,2.7~3.6V,SOIC8-208mil,58nm,EF4017,Tray, 100% new | SHENZHEN TONGWEI COMMUNICATION TECHNOLOGY COLTD | 2000 | PCE | 293 | Taiwan | NA |
3/30/2024 | 85423200 | 201NFZT64#&Nor Flash Memory, 2010020005391087, 64Mbit,2.7~3.6V,SOIC8-208mil,58nm,EF4017,Tray, 100% new | SHENZHEN TONGWEI COMMUNICATION TECHNOLOGY COLTD | 19600 | PCE | 3514.28 | Taiwan | NA |