3/30/2024 | 85423900 | Integrated electronic circuit 'IC FLASH 256MBIT SPI/QUAD 16SOIC S25FL256SAGMFNG00. New 100% | MOUSER ELECTRONICS INC | 3 | PCE | 20.4 | Taiwan | NA |
3/30/2024 | 85423200 | 201NFZT64#&Nor Flash Memory, 2010020005391087, 64Mbit,2.7~3.6V,SOIC8-208mil,58nm,EF4017,Tray, 100% new | SHENZHEN TONGWEI COMMUNICATION TECHNOLOGY COLTD | 4800 | PCE | 794.88 | Taiwan | NA |
3/30/2024 | 85423200 | 1107-002768#&IC-NOR FLASH;EN25Q40B-104HIP2X,SOP,8P,TP / IC (MEMORY) | SAMSUNG ELECTRONICS HCMC CE COMPLEX CO LTD | 2000 | PCE | 128.6 | Taiwan | NA |
3/30/2024 | 85423900 | HD IC#&Integrated circuit used for backup IC 64MBIT SERIAL FLASH MEMORY TFBGA-24 EN25QA64A-104BBIP | HANDAN BROADINFOCOM CO LTD | 19200 | PCE | 23656.32 | Taiwan | NA |
3/30/2024 | 85423200 | 201NFZT65#&Nand Flash Memory, 2010020002781669, 1Gbit,2.7~3.6V,TSOP48,34nm,2CF1,4bit ECC,Tray, 100% new | SHENZHEN GONGJIN ELECTRONICS CO LTD | 341 | PCE | 317.7779 | Taiwan | NA |
3/30/2024 | 85423200 | 201NFZT64#&Nor Flash Memory, 2010020005391087, 64Mbit,2.7~3.6V,SOIC8-208mil,58nm,EF4017,Tray, 100% new | SHENZHEN TONGWEI COMMUNICATION TECHNOLOGY COLTD | 9600 | PCE | 1409.28 | Taiwan | NA |
3/30/2024 | 85423200 | 201NFZT64#&Nor Flash Memory, 2010020005391087, 64Mbit,2.7~3.6V,SOIC8-208mil,58nm,EF4017,Tray, 100% new | SHENZHEN TONGWEI COMMUNICATION TECHNOLOGY COLTD | 2000 | PCE | 293 | Taiwan | NA |
3/30/2024 | 85423200 | 201NFZT64#&Nor Flash Memory, 2010020005391087, 64Mbit,2.7~3.6V,SOIC8-208mil,58nm,EF4017,Tray, 100% new | SHENZHEN TONGWEI COMMUNICATION TECHNOLOGY COLTD | 19600 | PCE | 3514.28 | Taiwan | NA |
3/30/2024 | 85423200 | 1107-002626#&IC-NOR FLASH;W25Q128JVSIQ,128Mbit,128Mx1 / INTEGRATED ELECTRONIC CIRCUIT (MEMORY) | SAMSUNG ELECTRONICS HCMC CE COMPLEX CO LTD | 2400 | PCE | 940.56 | Taiwan | NA |
3/29/2024 | 85423200 | 72.02501.00X#&Integrated electronic circuit (NAND FLASH memory), voltage 2.7-3.6V, PN: W25N01GVZEIG, 100% new. Code 72.02501.00X | WISTRON NEWEB CORPORATION | 7680 | PCE | 4531.2 | Taiwan | NA |