1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 216 W. VOLTAGE COLLECTOR-EMMITTER 600 V. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 10 | | 43.13 | Russia | Hayes | HERITAGE INTERNATIONAL FREIGHT LTD BY ORDER OF RS COMPONENTS LTD | Get Detailed Shipment Records
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1/28/2022 | 8542324500 | INTEGRATED ELECTRONIC CHIP: FERROELECTRIC RAM (FRAM). MEMORY 16MB. SUPPLY VOLTAGE 2.7-3.6V. DIMENSIONS: 4.97 X 3.98 X 1.48MM. ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT DO NOT HAVE A CRYPTOGRAPHY FUNCTION (CHIF | 1000 | | 958.74 | Russia | Hayes | RS COMPONENTS UK |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL TRANSISTOR. MAXIMUM POWER DISPOSION 110W. VOLTAGE DRAIN-SOURCE 60 V. CURRENT 20A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 230 | | 217.46 | Russia | Hayes | RS COMPONENTS UK |
1/28/2022 | 8542339000 | INTEGRATED ELECTRONIC CHIP: OPERATIONAL AMPLIFIER. WORKING VOLTAGE 3-5V. DIMENSIONS 3 X 1.7 X 1.3MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING. DOES NOT CONTAIN CRYPTOGRAPHY FUNCTIONS. | 406 | | 541.73 | Russia | Hayes | RS COMPONENTS UK |
1/29/2022 | 8501109900 | ENGINE ELECTRIC DIRECT CURRENT. | 9 | | 227.26 | Russia | Hayes | HERITAGE INTERNATIONAL FREIGHT LTD BY ORDER OF RS COMPONENTS LTD |
1/17/2022 | 8542399010 | MONOLITHIC, ELECTRONIC INTEGRATED MICROCIRCUIT: DOUBLE IDEAL DIODE MICROCIRCUIT. VOLTAGE 2.5-5.5V. SIZE 3 X 3 X 0.7MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING. DOES NOT HAVE CRYPTOGRAPHY (ENCRYPTION) FUNCTION | 10 | | 35.35 | Russia | Hayes | RS COMPONENTS UK |