1/27/2022 | 8541290010 | 1. MOSFET N-channel transistors with a scattering capacity of 69 W: art. BSZ096N10LS5ATMA1 - 50pcs, Power field-effect transistors, MES structure, N-channel, 1.3W power: art. IRLML2502TRPBF - 4000pcs, Power field-effect transistors, MES structure, N-channel | 1 | kg | 548 | Ukraine | UA100310 | Splendent Technologies Pte Ltd | Get Detailed Shipment Records
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1/27/2022 | 8541290010 | 1. Power field-effect transistors, MES structure, N-channel, 19 W power: art. SIA456DJ-T1-GE3 - 20 pieces. For civil industrial electrical engineering. | 0 | kg | 5 | Ukraine | UA100310 | Splendent Technologies Pte Ltd |
1/11/2022 | 8541290010 | 1. Transistors powerful field, MES structure, N-channel, power 2 W: art. IRF7341TR - 9 pieces. For civil industrial electrical engineering. | 0 | kg | 9 | Ukraine | UA100310 | Splendent Technologies Pte Ltd |