1/27/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF NO MORE THAN 512 MIBIT (UP TO 16 MIBIT OF FLASH-MEMORY), INTENDED FOR MOUNTING ON A PRINTED BOARD, APPLIED AS ACCESSORIES IN THE CIVIL RADIOELECTRON | 95.17 | China | TIMOK LLC | Get Detailed Shipment Records
|
1/29/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUIT CONTAINING ASSEMBLED ACTIVE ELEMENTS (DIODES, TRANSISTORS), WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR SYSTEMS | 9170.49 | China | HARTIS DV LLC |
1/14/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS CONTAINING ASSEMBLED ACTIVE ELEMENTS (DIODES, TRANSISTORS), WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. | 64.53 | China | SETUNTEL LLC |
1/10/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. | 153.39 | China | NPF RET LLC |