| 3/30/2024 | 85412900 | I0089#&Transistor field. TR FET P-CHANN SM3305PSQGC SAW DFN3*3-8P.100% brand new.35-397489-01 | XXXXXXXXXX | 5000 | PCE | 347.5 | China | NA |
| 3/30/2024 | 85412900 | NPL1131-1#&Field Effect Transistor CM3407 P-CH VDS=-30V VGS=+/-20V -4.1A 40mohm SMD SOT-23 TR RoHS REACH APPLIED Power,energy dissipation rate 1.2W NPL printed circuit manufacturing. 100% new. Code 1131TDS00010 | XXXXXXXXXX | 75000 | PCE | 2047.5 | China | NA |
| 3/30/2024 | 85412900 | NL35#&TR/FET transistor semiconductor components (M01070036A) UT3N06G-AA3[SOT-223]; 100% new | XXXXXXXXXX | 15000 | PCE | 892.5 | Taiwan | NA |
| 3/30/2024 | 85412900 | NPL1131-1#&Field Effect Transistor SP20P35T2 P-CH -20V -/+12V -4.5A 35m Ohm SMD SOT23 TR RoHS REACH,Power Dissipation Rate: 2.1W. NPL produces printed circuits. 100% new. Code 1131TDS00004 | XXXXXXXXXX | 81000 | PCE | 1701 | China | NA |
| 3/30/2024 | 85412900 | I0089#&Transistor field. TR FET P-CHANN SM3305PSQGC SAW DFN3*3-8P.100% brand new.35-397489-01 | XXXXXXXXXX | 5000 | PCE | 347.5 | China | NA |
| 3/30/2024 | 85412900 | NPL1131-1#&Field Effect Transistor 2N7002 N-CH 60V +/- 20V 0.8A 5 Ohm SMD SOT23 TR RoHS REACH, power dissipation ratio:3W.NPL produces printed circuits. 100% new. Code 1131TDS00002 | XXXXXXXXXX | 42000 | PCE | 243.6 | China | NA |
| 3/30/2024 | 85412900 | NL91#&Transistor,TR - MMBT2222AM3T5G,KNETZ-0267 | XXXXXXXXXX | 8000 | PCE | 150.4 | China | NA |
| 3/30/2024 | 85412900 | NPL1131-1#&Field Effect Transistor ME2333 P-CH -20V +/-12V -5.1A 27m Ohm SMD SOT-23 TR RoHS REACH,power dissipation rate 3W. NPL produces printed circuits. 100% new. Code 1131TDS00001 | XXXXXXXXXX | 40000 | PCE | 1924 | China | NA |
| 3/29/2024 | 85412900 | I0089#&TR Field Transistor NPN EMH10T2R SOT-563(EMT6), 100% new.35-123936-01 | XXXXXXXXXX | 2000 | PCE | 39 | South Korea | NA |
| 3/29/2024 | 85412900 | I0089#&TR Field Transistor PNP EMT2T2R SOT-563(EMT6), 100% new.35-232474-01 | XXXXXXXXXX | 1580 | PCE | 316.316 | Thailand | NA |