| 3/30/2024 | 85412900 | N0211#&Mosfet semiconductor components, power dissipation rate per 1W-SMD MOS tube; NCE01P03S; SOP-8; Volume; Ncepower; P channel; -100V; -3A; VGS=-10V(170mOhm)/=-4.5V(200mOhm), used motherboard, 100% new | XXXXXXXXXX | 12000 | PCE | 1196.4 | China | NA |
| 3/30/2024 | 85412900 | N0211#&Mosfet semiconductor components, power dissipation rate per 1W-SMD MOS tube; TPH1R204PL,LQ(M1; SOP Advance(N); Packed in rolls; Toshiba; N channel; 40V; 150A, used motherboard, 100% new | XXXXXXXXXX | 25000 | PCE | 8230 | China | NA |
| 3/30/2024 | 85412900 | N0211#&Mosfet semiconductor components, power dissipation rate per 1W-MOS tube; NTTFS015P03P8ZTAG; WDFN8; Packed; ON; P channel; 30V; 47.6ARds7.5mohm; , used motherboard manufacturer, 100% new | XXXXXXXXXX | 3000 | PCE | 579.3 | China | NA |
| 3/30/2024 | 85412900 | N0211#&Semiconductor components Mosfet-MOS tube, VS4110AT, TO-220AB, tube mounting, Vanguard, N channel, 100V, 180A, power dissipation rate > 1 W, used motherboard manufacturer, 100% new | XXXXXXXXXX | 6000 | PCE | 4011 | China | NA |
| 3/30/2024 | 85412900 | N0211#&Mosfet semiconductor components, power dissipation rate per 1W-SMD MOS tube; LN2306LT1G; SOT-23; Packed in roll; LRC; N-channel; 30V; 5.8A, used motherboard, 100% new | XXXXXXXXXX | 6000 | PCE | 121.2 | China | NA |
| 3/30/2024 | 85412900 | N0211#&Mosfet semiconductor components, power dissipation rate per 1W-SMD MOS tube; LBSS138LT1G; SOT-23LRC; N-channel; 50V; 200mA, used motherboard, 100% new | XXXXXXXXXX | 21000 | PCE | 212.1 | China | NA |
| 3/30/2024 | 85412900 | N0211#&Mosfet semiconductor components, power dissipation rate per 1W-MOSFET; 2KK5009; SOT-23; Package; Kexin; N-channel; 60V; 300mA, used motherboard, 100% new | XXXXXXXXXX | 60000 | PCE | 540 | China | NA |
| 3/30/2024 | 85412900 | N0211#&Mosfet semiconductor components, power dissipation rate per 1W-MOS tube; JMTL850P04A; SOT-23; Package; Jiejie Micro; P channel; -40V; -5A; Rds(on)90mOhm @VGS=-10V, used motherboard, 100% new | XXXXXXXXXX | 3000 | PCE | 60.9 | China | NA |
| 3/30/2024 | 85412900 | N0211#&Mosfet semiconductor components, power dissipation rate per 1W-Trial SMD MOS tube;BSS84;SOT-23/JSCJ;P channel;50V;130mA;Rds(on)4.5-10Ohm;VGS(th)0.9 V? 2V, used motherboard, 100% new | XXXXXXXXXX | 9000 | PCE | 90.9 | China | NA |
| 3/30/2024 | 85412900 | N0211#&Mosfet semiconductor components, power dissipation rate per 1W-SMD MOS tube; AO3404; SOT-23-3; Packed in roll; kexin(Kexin); N-Channel; 30V; 5.8A, used motherboard, 100% new | XXXXXXXXXX | 3000 | PCE | 157.5 | China | NA |