| 3/22/2024 | 85412900 | Metal - oxide semiconductor field effect transistor, power dissipation rate 1- 2W, code: CS10N40FA9R, used for electronic devices. hsx: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. 100% new | XXXXXXXXXX | 50000 | PCE | 7155 | China | NA |
| 3/22/2024 | 85412900 | Metal - oxide semiconductor field effect transistor, power dissipation rate 1- 2W, code: CS8N65FA9R-G, used for electronic devices. hsx: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. 100% new | XXXXXXXXXX | 10000 | PCE | 1701 | China | NA |
| 3/5/2024 | 85412900 | Metal-oxide semiconductor field-effect transistor, power dissipation rate 1- 2W, code: CS8N65FA9R-G, used for electronic devices. hsx:WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. 100% new | XXXXXXXXXX | 15000 | PCE | 2551.5 | China | NA |
| 3/5/2024 | 85412900 | Metal - oxide semiconductor field effect transistor, power dissipation rate 1- 2W, code: CS7N65FA9R, used for electronic devices. hsx: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. 100% new | XXXXXXXXXX | 20000 | PCE | 2542 | China | NA |
| 3/5/2024 | 85412900 | Metal - oxide semiconductor field effect transistor, power dissipation rate 1- 2W, code: CS10N40FA9R, used for electronic devices. hsx: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. 100% new | XXXXXXXXXX | 50000 | PCE | 7155 | China | NA |
| 1/25/2024 | 85412900 | Metal - oxide semiconductor field effect transistor, power dissipation rate 1- 2W, code: CS7N65FA9R, used for electronic devices. hsx: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. 100% new | XXXXXXXXXX | 80000 | Pieces | 10160 | China | CANG XANH VIP |
| 1/25/2024 | 85412900 | Metal - oxide semiconductor field effect transistor, power dissipation rate 1- 2W, code: CS10N40FA9R, used for electronic devices. hsx: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. 100% new | XXXXXXXXXX | 85000 | Pieces | 12155 | China | CANG XANH VIP |
| 1/10/2024 | 85412900 | Metal - oxide semiconductor field effect transistor, power dissipation rate 1- 2W, code: CS10N40FA9R, used for electronic devices. hsx: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. 100% new | XXXXXXXXXX | 90000 | Pieces | 12870 | China | CANG DINH VU - HP |
| 1/6/2024 | 85412900 | Field effect transistor, energy dissipation rate 1.38W, voltage 650V, used to produce speakers, PN. 120201-000008-1, Publisher: CN Resources Microelectronics, 100% new | XXXXXXXXXX | 10440 | Pieces | 2035.8 | China | CANG TAN VU - HP |
| 11/14/2023 | 85412900 | Metal - oxide semiconductor field effect transistor, power dissipation rate 1- 2W, code: CS7N65FA9R, used for electronic devices. hsx: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. 100% new | XXXXXXXXXX | 80000 | Pieces | 10080 | China | CANG XANH VIP |