3/30/2024 | 85412900 | V014002400#&Electric field effect semiconductor transistor, energy dissipation rate over 1W used to produce car LED light module SQ2318AES_T1_GE3, 100% new product | XXXXXXXXXX | 129000 | PCE | 9958.8 | China | NA |
3/30/2024 | 85412900 | I0089#&Transistor field. TR FET P-CHANN SM3305PSQGC SAW DFN3*3-8P.100% brand new.35-397489-01 | XXXXXXXXXX | 5000 | PCE | 347.5 | China | NA |
3/30/2024 | 85412900 | V007012000#&Electric field effect semiconductor transistor, energy dissipation rate over 1W used to produce car LED light module SMMBT2222ALT1G, 100% new product | XXXXXXXXXX | 3000 | PCE | 38.1 | China | NA |
3/30/2024 | 85412900 | TRANZ#&MOSFET contact-controlled field transistor (power dissipation rate >1W) used to produce heatsink panels, code 0505A0100020, 100% new | XXXXXXXXXX | 382146 | PCE | 133445.3832 | China | NA |
3/30/2024 | 85412900 | TRANZ#&MOSFET contact-controlled field transistor (power dissipation rate >1W) used to produce heatsink panels, code 0505A0100022, 100% new | XXXXXXXXXX | 361800 | PCE | 75290.58 | China | NA |
3/30/2024 | 85412900 | NPL1131-1#&Field Effect Transistor CM3407 P-CH VDS=-30V VGS=+/-20V -4.1A 40mohm SMD SOT-23 TR RoHS REACH APPLIED Power,energy dissipation rate 1.2W NPL printed circuit manufacturing. 100% new. Code 1131TDS00010 | XXXXXXXXXX | 75000 | PCE | 2047.5 | China | NA |
3/30/2024 | 85412900 | 84.21953.002#&Semiconductor metal-oxide field effect transistor, power dissipation rate 2.5W, PN: CSD19538Q2, voltage 100V/13.1A, 100% brand new. Code 84.21953.002 | XXXXXXXXXX | 6000 | PCE | 600 | China | NA |
3/30/2024 | 85412900 | V014005900#&Electric field effect semiconductor transistor, energy dissipation rate over 1W used to produce car LED light modules RSS070P05HZG, 100% new product | XXXXXXXXXX | 2500 | PCE | 1184 | Thailand | NA |
3/30/2024 | 85412900 | NPL1131-1#&Field Effect Transistor SP20P35T2 P-CH -20V -/+12V -4.5A 35m Ohm SMD SOT23 TR RoHS REACH,Power Dissipation Rate: 2.1W. NPL produces printed circuits. 100% new. Code 1131TDS00004 | XXXXXXXXXX | 81000 | PCE | 1701 | China | NA |
3/30/2024 | 85412900 | 84.23313.001#&Semiconductor metal-oxide field effect transistor, power dissipation rate 1.6-26W, PN: SM3313NSQGC-TRG, voltage 30V/14A, 100% brand new. Code 84.23313.001 | XXXXXXXXXX | 1000 | PCE | 61 | China | NA |