3/30/2024 | 85412100 | LXNA0006#&Field Effect Transistor (power dissipation rate <1W), 13306-S1E0006H-00.100% brand new | XXXXXXXXXX | 27000 | PCE | 1836 | China | NA |
3/29/2024 | 85412100 | Field effect power transistor-FET, 0.35w, code: BSS123, NSX: onsemi, 100% new | XXXXXXXXXX | 200 | PCE | 10.9 | Thailand | NA |
3/29/2024 | 85412100 | 120-310-0226R#&Field effect transistor, voltage 60V 115mA, energy dissipation rate 0.2W, used to produce telecommunications equipment | XXXXXXXXXX | 8000 | PCE | 92 | Taiwan | NA |
3/29/2024 | 85412100 | 22.11SBC817-00010R#&Field Effect Transistor, with power dissipation rate less than 1 W | XXXXXXXXXX | 12000 | PCE | 75.6 | China | NA |
3/29/2024 | 85412100 | 120-100-0012G#&Field effect transistor voltage 40V 200mA, power dissipation rate 225 mW, used to produce telecommunications equipment | XXXXXXXXXX | 102000 | PCE | 336.6 | Taiwan | NA |
3/29/2024 | 85412100 | 84.23134.001KX#&Semiconductor metal-oxide field effect transistor, power dissipation rate 550mW, PN: NTK3134NT5G, voltage 20V/0.89A, 100% new. Code 84.23134.001KX | XXXXXXXXXX | 72000 | PCE | 2520 | China | NA |
3/29/2024 | 85412100 | 120-100-0012G#&Field effect transistor voltage 40V 200mA, power dissipation rate 225 mW, used to produce telecommunications equipment | XXXXXXXXXX | 36000 | PCE | 118.8 | Taiwan | NA |
3/29/2024 | 85412100 | 84.21236.002KX#&Semiconductor metal-oxide field effect transistor, power dissipation rate 500mW, PN: BSS123NH6433XTMA1, voltage 100V/0.19A, 100% new. Code 84.21236.002KX | XXXXXXXXXX | 10000 | PCE | 370 | China | NA |
3/29/2024 | 85412100 | 120-100-0012G#&Field effect transistor voltage 40V 200mA, power dissipation rate 225 mW, used to produce telecommunications equipment | XXXXXXXXXX | 54000 | PCE | 178.2 | Taiwan | NA |
3/29/2024 | 85412100 | 120-318-0014R#&Field effect transistor voltage 60V 300mA, energy dissipation rate 0.5W, used to produce telecommunications equipment | XXXXXXXXXX | 18000 | PCE | 88.2 | Taiwan | NA |