3/29/2024 | 85412900 | I.3.2B#&443200133. Field effect transistor with energy dissipation rate greater than or equal to 1 W, MOS-N;CS4N65F;TO-220F;HUAJING, used to produce battery chargers for hand drills. New 100%. | XXXXXXXXXX | 51000 | PCE | 5400.9 | China | NA |
3/29/2024 | 85412900 | I.3.2B#&443200018. Field effect transistor with energy dissipation rate greater than or equal to 1 W, MOS-P;CRTD210P04L2-G;TO-252;HUAJING, used to produce battery chargers for hand drills. New 100%. | XXXXXXXXXX | 2500 | PCE | 175 | China | NA |
3/29/2024 | 85412900 | I.3.2B#&443200136. Field effect transistor with energy dissipation rate greater than or equal to 1 W, MOS-N;TK42A12N1;TO-220;TOSHIBA, used to produce battery chargers for hand drills. New 100%. | XXXXXXXXXX | 2500 | PCE | 696.25 | China | NA |
3/29/2024 | 85412900 | I.3.2B#&443200126. Field effect transistor with energy dissipation rate greater than or equal to 1 W, MOS-N;CS10N80FA9D;TO-220F;CRMICRO, used to produce battery chargers for hand drills. New 100%. | XXXXXXXXXX | 1000 | PCE | 441.8 | China | NA |
3/29/2024 | 85412900 | I.3.2B#&443200079. Field effect transistor with energy dissipation rate greater than or equal to 1 W, MOS-P;AP9561GH;TO-252;APEC, used to produce battery chargers for hand drills. New 100%. | XXXXXXXXXX | 6000 | PCE | 795 | Taiwan | NA |
3/29/2024 | 85412900 | I.3.2B#&443200104. Field effect transistor with energy dissipation rate greater than or equal to 1 W, MOS-P;AP9565BGH;TO-252;APEC, used to produce battery chargers for hand drills. New 100%. | XXXXXXXXXX | 15000 | PCE | 1102.5 | Taiwan | NA |
3/29/2024 | 85412900 | I.3.2B#&443200131. Field effect transistor with energy dissipation rate greater than or equal to 1 W, MOS-N;MMF60R360QTH;TO-220F;MAGNACHIP, used to produce battery chargers for hand drills. New 100%. | XXXXXXXXXX | 3000 | PCE | 939 | China | NA |
3/29/2024 | 85412900 | I.3.2B#&443200131. Field effect transistor with energy dissipation rate greater than or equal to 1 W, MOS-N;MMF60R360QTH;TO-220F;MAGNACHIP, used to produce battery chargers for hand drills. New 100%. | XXXXXXXXXX | 5000 | PCE | 1565 | China | NA |
3/29/2024 | 85412900 | I.3.2B#&443200023. Field effect transistor with energy dissipation rate greater than or equal to 1 W, MOS-P;PDD4903A;TO252;POTENS, used to produce battery chargers for hand drills. New 100%. | XXXXXXXXXX | 10000 | PCE | 1618 | China | NA |
3/29/2024 | 85412900 | I.3.2B#&443200136. Field effect transistor with energy dissipation rate greater than or equal to 1 W, MOS-N;TK42A12N1;TO-220;TOSHIBA, used to produce battery chargers for hand drills. New 100%. | XXXXXXXXXX | 5000 | PCE | 1392.5 | China | NA |