| 3/29/2024 | 85412100 | 120-310-0226R#&Field effect transistor, voltage 60V 115mA, energy dissipation rate 0.2W, used to produce telecommunications equipment | XXXXXXXXXX | 8000 | PCE | 92 | Taiwan | NA |
| 3/29/2024 | 39122012 | Energy in paint production industry - NITROCELLULOSE RS 20 SEC. (in IPA) (Powdered unplasticized nitrocellulose moistened with alcohol. City: Nitrocellulose, Isopropanol) with label, no brand. Manufacturer: TNC. New 100% | XXXXXXXXXX | 2520 | KGM | 6930 | Taiwan | NA |
| 3/29/2024 | 85412900 | 120-100-0013R#&Field effect transistor, voltage 30V 100mA, energy dissipation rate 0.33W, used to produce telecommunications equipment | XXXXXXXXXX | 12000 | PCE | 75.6 | Taiwan | NA |
| 3/29/2024 | 85412900 | I.3.2B#&443200079. Field effect transistor with energy dissipation rate greater than or equal to 1 W, MOS-P;AP9561GH;TO-252;APEC, used to produce battery chargers for hand drills. New 100%. | XXXXXXXXXX | 6000 | PCE | 795 | Taiwan | NA |
| 3/29/2024 | 39122012 | Energy in paint production industry - NITROCELLULOSE RS 1/4 SEC. (in IPA) (Powdered unplasticized nitrocellulose moistened with alcohol. City: Nitrocellulose, Isopropanol) with label, no brand. Manufacturer: TNC. New 100% | XXXXXXXXXX | 11520 | KGM | 31680 | Taiwan | NA |
| 3/29/2024 | 85412900 | I.3.2B#&443200104. Field effect transistor with energy dissipation rate greater than or equal to 1 W, MOS-P;AP9565BGH;TO-252;APEC, used to produce battery chargers for hand drills. New 100%. | XXXXXXXXXX | 15000 | PCE | 1102.5 | Taiwan | NA |
| 3/29/2024 | 85412100 | AEJ046#&Transistor, has an energy dissipation rate of 0.29W, assembly components, camera production, 100% new - TR NPN CHDTC114YMGP SOT-723 (CHENMKO), P/N: YG0342100195188 | XXXXXXXXXX | 40000 | PCE | 560 | Taiwan | NA |
| 3/29/2024 | 85412100 | 120-318-0014R#&Field effect transistor voltage 60V 300mA, energy dissipation rate 0.5W, used to produce telecommunications equipment | XXXXXXXXXX | 18000 | PCE | 88.2 | Taiwan | NA |
| 3/29/2024 | 85412100 | 120-203-0044R#&Transistor voltage 65V 100mA, energy dissipation rate 0.15W, used to produce telecommunications equipment | XXXXXXXXXX | 39000 | PCE | 358.8 | Taiwan | NA |
| 3/29/2024 | 85412900 | I.3.2B#&443200079. Field effect transistor with energy dissipation rate greater than or equal to 1 W, MOS-P;AP9561GH;TO-252;APEC, used to produce battery chargers for hand drills. New 100%. | XXXXXXXXXX | 6000 | PCE | 795 | Taiwan | NA |