3/31/2024 | 85423900 | 3F256G08M2UDB-TA-C#&Integrated electronic circuit 256Gbit 32Gx8 NAND MLC DDR 16K 3.3V/1.8V C-TEMP (A15) DDP 2CE BGA132 12X18MM VCCQ(1.8V OR 3.3V), manufacturer: Toshiba, 100% new product | XXXXXXXXXX | 4000 | PCE | 34619.6 | Taiwan | NA |
3/30/2024 | 85423900 | NPL010#&1105-002993 : Integrated electronic circuits (other types) - IC-DDR3 SDRAM;H5TQ4G63EFR-TEC,DDR3-SDRAM | XXXXXXXXXX | 1600 | PCE | 1650.4 | Singapore | NA |
3/30/2024 | 85423900 | Integrated electronic circuit REG CONV DDR 1OUT 10VSON 'TPS51200DRCT. New 100% | XXXXXXXXXX | 5 | PCE | 5.1 | China | NA |
3/29/2024 | 85423900 | 201PIZT48#&Electronic integrated circuit IC, 2010010014691079, PM,For DDR/DDR2/DDR3/DDR4,2.5~3.3V,3A,VSON-10, 100% new | XXXXXXXXXX | 3000 | PCE | 918 | China | NA |
3/29/2024 | 85423900 | 501006092#&SDRAM signal transmission IC/IS62WV10248EBLL-45TLI. Used in the production of charging and energy storage devices. New 100% | XXXXXXXXXX | 8206 | PCE | 25766.84 | China | NA |
3/29/2024 | 85423900 | 1105-002924#&IC integrated IC-DDR4 SDRAM, K4F4E3S4HF-MGCJ, 100% new | XXXXXXXXXX | 20000 | PCE | 27456 | South Korea | NA |
3/28/2024 | 85423900 | SDRAM032#&0IESL-0019A - Integrated electronic RAM used to produce electronic circuits, 100% new - SDRAM ** IC, M55D1G3232A-GFBG2Y, ESMT, 1G, 2133MHZ, VFBGA, TR, 178, 1.7V~1.95V | XXXXXXXXXX | 1660 | PCE | 2221.578 | South Korea | NA |
3/28/2024 | 85423900 | SEHC-015#&INTEGRATED ELECTRONIC CIRCUIT IC-DDR3 SDRAM 1105-002853 HX1000-0595A .100% new product | XXXXXXXXXX | 17786 | PCE | 22054.64 | South Korea | NA |
3/27/2024 | 85423900 | 1105-002924#&IC integrated IC-DDR4 SDRAM, K4F4E3S4HF-MGCJ, 100% new | XXXXXXXXXX | 30000 | PCE | 41184 | South Korea | NA |
3/27/2024 | 85423900 | NPL010#&1105-003102 : Integrated electronic circuit (other) - IC-DDR4 SDRAM;K4A4G165WF-BCTD,4266Mbps D | XXXXXXXXXX | 2240 | PCE | 2261.728 | South Korea | NA |