3/30/2024 | 85423200 | 1105-003223#&IC-DDR4 SDRAM;H54G26AYRBX256,FBGA,200P,T / INTEGRATED ELECTRONIC CIRCUIT (RAM MEMORY) | XXXXXXXXXX | 1200 | PCE | 1649.88 | Singapore | NA |
3/30/2024 | 85423200 | 201DYZT52#&SDRAM Memory, 2010020018641087, 2Gbit,16M*16bit*8banks,1.35V/1.5V,FBGA96,25snm,W632GU6QB-11, 100% new | XXXXXXXXXX | 810 | PCE | 778.248 | Taiwan | NA |
3/30/2024 | 85423200 | 201DYZT52#&SDRAM Memory, 2010020013491087, 1Gbit,8M*16bit*8banks,1.5V, 100% new | XXXXXXXXXX | 3168 | PCE | 2231.2224 | Taiwan | NA |
3/29/2024 | 85423200 | I0021#&Integrated electronic circuit with SDRAM memory function MT53E2G32D4DE-046 WT:C TFBGA-200, 100% new.30-408946-01 | XXXXXXXXXX | 1037 | PCE | 29060.6806 | Taiwan | NA |
3/29/2024 | 85423200 | 201DYZT52#&SDRAM Memory, 2010020016891445, 4Gbit,32M*16bit*8banks,1.2V,FBGA96,20nm,NT5AD256M16E4-JR, 100% new | XXXXXXXXXX | 18000 | PCE | 24985.8 | Taiwan | NA |
3/29/2024 | 85423200 | I0021#&Integrated electronic circuit with SDRAM memory function 2M*4*16 6NS 3.3V TFBGA-54, 100% brand new.30-407021-01 | XXXXXXXXXX | 1015 | PCE | 1523.8195 | Taiwan | NA |
3/29/2024 | 85423200 | I0021#&Integrated electronic circuit with memory function SDRAM 512M*16-6ns 1.8V VFBGA-54, 100% new.30-406121-02 | XXXXXXXXXX | 600 | PCE | 1128.96 | Taiwan | NA |
3/29/2024 | 85423200 | I0021#&Integrated electronic circuit with SDRAM memory function 2M*4*16 6NS 3.3V TFBGA-54, 100% brand new.30-407021-01 | XXXXXXXXXX | 2552 | PCE | 3831.3176 | Taiwan | NA |
3/29/2024 | 85423200 | I0021#&Integrated electronic circuit with SDRAM memory function 2M*4*16 6NS 3.3V TFBGA-54, 100% brand new.30-407021-01 | XXXXXXXXXX | 1000 | PCE | 1751.5 | Taiwan | NA |
3/28/2024 | 85423200 | IC electronic circuit, memory for printed circuits EMMC_5.1,8GB,52MHZ/DDR,2.7V~3.6V,11.5X13X0.8MM,153-FBGA. Code: KLM8G1GETF-B041. New 100%. Manufacturer: Samsung Semiconductor Global | XXXXXXXXXX | 30000 | PCE | 48018 | China | NA |