3/30/2024 | 85423900 | Integrated electronic circuit REG CONV DDR 1OUT 10VSON 'TPS51200DRCT. New 100% | XXXXXXXXXX | 5 | PCE | 5.1 | China | NA |
3/29/2024 | 85332100 | HKL02#&Resistor-/DIP/DDR-5*11/2UEW0.25mm/L>330UH/10KHz/0.3V/3.5+-0.5mm/, material code: 101.20.02850. New 100% | XXXXXXXXXX | 3015 | PCE | 90.45 | China | NA |
3/29/2024 | 85423900 | 201PIZT48#&Electronic integrated circuit IC, 2010010014691079, PM,For DDR/DDR2/DDR3/DDR4,2.5~3.3V,3A,VSON-10, 100% new | XXXXXXXXXX | 3000 | PCE | 918 | China | NA |
3/29/2024 | 85423900 | 501006092#&SDRAM signal transmission IC/IS62WV10248EBLL-45TLI. Used in the production of charging and energy storage devices. New 100% | XXXXXXXXXX | 8206 | PCE | 25766.84 | China | NA |
3/28/2024 | 85044090 | Q320-130951#&STATIC POWER SUPPLY DDR-15G-5, VOLTAGE 5V, CAPACITY 15W. NEW 100% | XXXXXXXXXX | 18 | PCE | 253.0674 | China | NA |
3/28/2024 | 85423200 | IC electronic circuit, memory for printed circuits EMMC_5.1,8GB,52MHZ/DDR,2.7V~3.6V,11.5X13X0.8MM,153-FBGA. Code: KLM8G1GETF-B041. New 100%. Manufacturer: Samsung Semiconductor Global | XXXXXXXXXX | 30000 | PCE | 48018 | China | NA |
3/28/2024 | 85332100 | HKL02#&Resistor-/DIP/DDR-5*11/2UEW0.25mm/L>330UH/10KHz/0.3V/3.5+-0.5mm/, material code: 101.20.02850. New 100% | XXXXXXXXXX | 39224 | PCE | 1176.72 | China | NA |
3/28/2024 | 85423200 | IC electronic circuit, memory for printed circuits EMMC_5.1,8GB,52MHZ/DDR,2.7V~3.6V,11.5X13X0.8MM,153-FBGA. Code: KLM8G1GETF-B041. New 100%. Manufacturer: Samsung Semiconductor Global (FOC) | XXXXXXXXXX | 300 | PCE | 480 | China | NA |
3/28/2024 | 84718090 | 20-039451-00#&SHIELD,SOC,DDR,LID | XXXXXXXXXX | 23040 | PCE | 748.8 | China | NA |
3/28/2024 | 84718090 | 20-035296-00#&SHIELD,SOC-DDR,FENCE,KC20 | XXXXXXXXXX | 20000 | PCE | 840 | China | NA |