2/28/2024 | 32065010 | 3013055.NVL#&POSP luminescent substance POSP_GYM530 uses light-emitting diodes (TP: Aluminum oxide (Al2O3) -CAS: 1344-28-1; Yttrium oxide (Y2O3)- CAS: 1314-36-9, Digallium trioxide (Ga2O3)- CAS:12024-21 | XXXXXXXXXX | 3000 | GRM | 300 | China | NA |
2/21/2024 | 32065010 | 3013770.NVL#&Luminescent substance POSP_LSG-1 used in the production of light-emitting diodes, (Main name:Barium europium strontium silicate - CAS:1003049-92-0,Yttrium trioxide-CAS:1314-36-9,) | XXXXXXXXXX | 10000 | GRM | 8099 | South Korea | NA |
2/16/2024 | 32065010 | RDM.050#&Photoluminescent substance POSP_CAGO1 used in the production of light-emitting diodes (Ingredients: dighallium trioxide-cas:12024-21-4; Aluminum oxide-cas:1344-28-1;calcium oxide-cas:1305-78- 8; | XXXXXXXXXX | 50 | GRM | 33.235 | Japan | NA |
1/24/2024 | 32065010 | 3013770.NVL#&Luminescent substance POSP_LSG-1 used in the production of light-emitting diodes, (Main name:Barium europium strontium silicate - CAS:1003049-92-0,Yttrium trioxide-CAS:1314-36-9) | XXXXXXXXXX | 4000 | Gram | 3225.76 | South Korea | NA |
1/3/2024 | 32065010 | 3010725.NVL#&Luminescent substance POSP_SM-4_BREE used in the production of light-emitting diodes (TP: Aluminum oxide (Al2O3); Yttrium oxide (Y2O3); Lutetium oxide (Lu2O3); Digadolinium trioxide (Gd2O3); ) | XXXXXXXXXX | 1000 | Gram | 515.79 | China | NA |
1/3/2024 | 32065010 | 3010730.NVL#&Luminescent substance POSP_SM-6_BREE used in the production of light-emitting diodes (TP: Aluminum oxide (Al2O3); Yttrium oxide (Y2O3); Lutetium oxide (Lu2O3); Digadolinium trioxide (Gd2O3); ) | XXXXXXXXXX | 2000 | Gram | 778 | China | NA |
12/28/2023 | 32065010 | 3010730.NVL#&Luminescent substance POSP_SM-6_BREE used in the production of light-emitting diodes (TP: Aluminum oxide (Al2O3); Yttrium oxide (Y2O3); Lutetium oxide (Lu2O3); Digadolinium trioxide (Gd2O3)) | XXXXXXXXXX | 22000 | Gram | 8558 | China | NA |
12/28/2023 | 32065010 | 3010731.NVL#&Luminescent substance POSP_SM-8_BREE used in the production of light-emitting diodes (Ingredients: Aluminum oxide (Al2O3); Yttrium oxide (Y2O3); Digadolinium trioxide (Gd2O3); Cerium dioxide (CeO2)) | XXXXXXXXXX | 2000 | Gram | 254 | China | NA |
12/28/2023 | 32065010 | 3010731.NVL#&Luminescent substance POSP_SM-8_BREE used in the production of light-emitting diodes (Ingredients: Aluminum oxide (Al2O3); Yttrium oxide (Y2O3); Digadolinium trioxide (Gd2O3); Cerium dioxide (CeO2)) | XXXXXXXXXX | 2000 | Gram | 254 | China | NA |
12/28/2023 | 32065010 | 3010730.NVL#&Luminescent substance POSP_SM-6_BREE used in the production of light-emitting diodes (TP: Aluminum oxide (Al2O3); Yttrium oxide (Y2O3); Lutetium oxide (Lu2O3); Digadolinium trioxide (Gd2O3)) | XXXXXXXXXX | 22000 | Gram | 8558 | China | NA |