| 3/21/2024 | 85423200 | 2000-131-462#&IC DRAM DYNAMIC READ-WRITE RANDOM ACCESS, REJECTED DRAM | XXXXXXXXXX | 3091 | PCE | 1361.2764 | South Korea | NA |
| 3/21/2024 | 85423200 | 2000-131-462#&IC DRAM DYNAMIC READ-WRITE RANDOM ACCESS | XXXXXXXXXX | 39589 | PCE | 49133.9079 | South Korea | NA |
| 3/20/2024 | 85423200 | 2000-132-037#&IC DRAM DYNAMIC READ-WRITE RANDOM ACCESS, REJECTED DRAM | XXXXXXXXXX | 3316 | PCE | 1460.3664 | South Korea | NA |
| 3/20/2024 | 85423200 | 2000-132-037#&IC DRAM DYNAMIC READ-WRITE RANDOM ACCESS, REJECTED DRAM | XXXXXXXXXX | 2792 | PCE | 1229.5968 | South Korea | NA |
| 3/20/2024 | 85423200 | 2000-132-037#&IC DRAM DYNAMIC READ-WRITE RANDOM ACCESS | XXXXXXXXXX | 43244 | PCE | 53670.1284 | South Korea | NA |
| 3/20/2024 | 85423200 | 2000-132-037#&IC DRAM DYNAMIC READ-WRITE RANDOM ACCESS | XXXXXXXXXX | 39888 | PCE | 49504.9968 | South Korea | NA |
| 2/26/2024 | 85423200 | DRAM dynamic random access memory chip. Part No: MT62F512M32D2DS-031 AAT:B. Manufacturer: Micron Technology. New 100% | XXXXXXXXXX | 10 | PCE | 197 | Taiwan | NA |
| 2/2/2024 | 85423200 | ELECTRONIC COMPONENTS: IC DRAM (DYNAMIC RANDOM ACCESS MEMORY CIRCUIT), PN: 340-265862-REEL, MFG PN: MT41K256M16TW-107 IT:P TR, Manufacturer: MICRON. PERSONAL USE GOODS, 100% NEW | XXXXXXXXXX | 80 | PCE | 534.4 | Taiwan | NA |
| 1/31/2024 | 85423200 | 2000-132-037#&IC DRAM DYNAMIC READ-WRITE RANDOM ACCESS, REJECTED DRAM | XXXXXXXXXX | 3209 | Pieces | 1411.96 | USA | HO CHI MINH |
| 1/31/2024 | 85423200 | 2000-132-037#&IC DRAM DYNAMIC READ-WRITE RANDOM ACCESS | XXXXXXXXXX | 43575 | Pieces | 54033 | USA | HO CHI MINH |