3/27/2024 | 85419000 | U0020#&Semiconductor base (in antenna dish) FHX36LPT/High Electron Mobility Transistor(HEMT).Conversion power: 0.00132W #&KXD | XXXXXXXXXX | 2500 | PCE | 2500 | Vietnam | NA |
3/13/2024 | 85419000 | S0282#&Semiconductor base(in antenna dish) fhx76lp/high electron mobility transistor(hemt).Conversion power: 0.00110W #&KXD | XXXXXXXXXX | 139 | PCE | 170.97 | Vietnam | NA |
2/3/2024 | 85419000 | U0019#&Semiconductor base (in antenna dish) FHX35LPT/High Electron Mobility Transistor(HEMT).Conversion power: 0.00132W #&KXD | XXXXXXXXXX | 7500 | PCE | 9375 | Vietnam | NA |
1/29/2024 | 85419000 | U0019#&Semiconductor base (in antenna dish) FHX35LPT/High Electron Mobility Transistor(HEMT).Conversion power: 0.00132W #&KXĐ | XXXXXXXXXX | 2500 | Pieces | 3575 | JP | HO CHI MINH |
1/26/2024 | 85419000 | U0020#&Semiconductor base (in antenna dish) FHX36LPT/High Electron Mobility Transistor(HEMT).Conversion power: 0.00132W #&KXĐ | XXXXXXXXXX | 2500 | Pieces | 3600 | JP | HO CHI MINH |
1/25/2024 | 85419000 | U0019#&Semiconductor base (in antenna dish) FHX35LPT/High Electron Mobility Transistor(HEMT).Conversion capacity: 0.00132W#&KXD | XXXXXXXXXX | 2500 | Pieces | 3575 | JP | HO CHI MINH |
1/19/2024 | 85419000 | U0019#&Semiconductor base (in antenna dish) FHX35LPT/High Electron Mobility Transistor(HEMT).Conversion power: 0.00132W #&KXĐ | XXXXXXXXXX | 2500 | Pieces | 3575 | JP | HO CHI MINH |
1/16/2024 | 85419000 | U0019#&Semiconductor base (in antenna dish) FHX35LPT/High Electron Mobility Transistor(HEMT).Conversion power: 0.00132W #&KXĐ | XXXXXXXXXX | 2500 | Pieces | 3575 | JP | HO CHI MINH |
1/10/2024 | 85419000 | U0019#&Semiconductor base (in antenna dish) FHX35LPT/High Electron Mobility Transistor(HEMT).Conversion power: 0.00132W #&KXĐ | XXXXXXXXXX | 2500 | Pieces | 3575 | JP | HO CHI MINH |
1/5/2024 | 85419000 | S0282#&Semiconductor base(in antenna dish) fhx76lp/high electron mobility transistor(hemt).Conversion power: 0.00110W#&KXD | XXXXXXXXXX | 81 | Pieces | 115.02 | JP | HO CHI MINH |