12/18/2023 | 8541410009 | LASER DIODE | XXXXXXXXXX | 30 | N/A | 45040 | China | MOSCOW |
12/7/2023 | 8541410009 | LASER DIODE, SEMICONDUCTOR TYPE (MATERIAL) - GALIUM ARSENIDE, PRINCE | XXXXXXXXXX | 6 | N/A | 2700 | China | MOSCOW |
12/7/2023 | 8541410009 | LASER DIODES, NOT SCRAP OF ELECTRICAL EQUIPMENT. USED AS A COMPONENT OF EQUIPMENT AND NOT INTENDED FOR INDEPENDENT USE: SOLID-STATE LASER PUMP DIODE IS A SEMICONDUCTOR LASER DIODE, IN A SEALED 14-PIN CASE, WAVELENGTH 974 NM, CO STABI LIZATION USING BRAGG | XXXXXXXXXX | 233 | N/A | 65820 | United States | HONG KONG |
12/7/2023 | 8541410009 | LASER DIODE MODULE FOR ALIGNMENT, SEMICONDUCTOR TYPE (MATERIAL) - GALIUM ARSENIDE | XXXXXXXXXX | 2 | N/A | 3921 | China | MOSCOW |
12/7/2023 | 8541410009 | LASER DIODE, SEMICONDUCTOR TYPE (MATERIAL) - GALIUM ARSENIDE, PRINCI | XXXXXXXXXX | 6 | N/A | 2700 | China | MOSCOW |
12/7/2023 | 8541410009 | LASER DIODE MODULE FOR ALIGNMENT, SEMICONDUCTOR TYPE (MATERIAL) - GALIUM ARSENIDE | XXXXXXXXXX | 1 | N/A | 1466 | China | MOSCOW |
12/7/2023 | 8541410009 | LASER DIODE MODULE FOR ALIGNMENT, SEMICONDUCTOR TYPE (MATERIAL) - APC | XXXXXXXXXX | 2 | N/A | 3921 | China | MOSCOW |
12/7/2023 | 8541410009 | LASER DIODE MODULE FOR ALIGNMENT, SEMICONDUCTOR TYPE (MATERIAL) - APC | XXXXXXXXXX | 1 | N/A | 1466 | China | MOSCOW |
12/4/2023 | 8541410009 | Light emitting diodes (LED): PART OF THE RADIOTHERAPEUTIC SYSTEM FOR RADIOSURGERY MODEL CYBERKNIFE: DIODE LASER EL63D05IG18 -8 PCS. (DIODE LASER IS ADJUSTABLE | XXXXXXXXXX | 8 | N/A | 483 | China | XIAN |
12/4/2023 | 8541410009 | LASER DIODE. SEMICONDUCTOR TYPE (MATERIAL) - GALIUM ARSENIDE, PRINCI | XXXXXXXXXX | 5 | N/A | 733 | China | MOSCOW |