| 12/4/2023 | 8541290000 | FIELD TRANSISTOR MODEL FQU13N06LTU POWER DISSIPATION 60 W TYPE: N-CHANNEL. TECHNICAL CHARACTERISTICS: TYPE OF INSTALLATION: SMD/SMT SURFACE, CASE: TO-220. DRAIN SOURCE VOLTAGE: 100 V, GATE SOURCE VOLTAGE: +/- 20 V, CONTINUOUS DRAIN CURRENT: 15 A DRAIN SOU | XXXXXXXXXX | 100 | N/A | 6 | Thailand | SHENZHEN |
| 11/24/2023 | 8541290000 | MOSFET TRANSISTOR IRFR5305TRPBF (INFINEON TECHNOLOGIES). SPECIFICATIONS: PRODUCT SUB-CATEGORY: HEXFET POWER MOSFET. INSTALLATION TYPE: SMD/SMT. TECHNOLOGY: SI. CHANNEL MODE: ENHANCEMENT. CONFIGURATION: SINGLE. TRANSISTOR POLARITY: P-CHANNEL, NUMBER OF CHA | XXXXXXXXXX | 1000 | N/A | 158 | China | SHENZHEN |
| 11/24/2023 | 8541290000 | N-CHANNEL FIELD TRANSISTOR WITH POWER DISSIPATION 150 W, MODEL IPB054N08N3G TECHNICAL AND/OR COMMERCIAL CHARACTERISTICS: TYPE OF MOUNTING: SMD/SMT (SURFACE MOUNTING), CASE: PG-TO263-3, CHANNEL TYPE: N, NUMBER OF ELEMENTS PER CHIP: 1, MAXIMUM DRAIN SOURCE | XXXXXXXXXX | 100 | N/A | 179 | China | SHENZHEN |
| 11/23/2023 | 8541290000 | TRANSISTOR MODEL BSP300H6327XUSA1 TYPE: MOSFET TRANSISTOR, POWER DISSIPPER: 1.8 W. TECHNICAL CHARACTERISTICS: TYPE OF INSTALLATION: SMD/SMT SURFACE CASE: SOT -223-4, TRANSISTOR POLARITY: N - CHANNEL, NUMBER OF CHANNELS: 1 CHANNEL, DRAIN-SOURCE BREAKDOWN V | XXXXXXXXXX | 10 | N/A | 129 | China | SHENZHEN |
| 11/23/2023 | 8541290000 | TRANSISTOR MODEL IRFH7188TRPBF, TYPE: FIELD, POWER DISSIPPER: 132 W, TECHNICAL CHARACTERISTICS, MOUNTING STYLE: SMD/SMT SURFACE, CASE: PQFN-8. Polarity of the transistor: N-channel number of channels: 1 channel, breakdown voltage Stock-Istok: 100 V. Direc | XXXXXXXXXX | 300 | N/A | 142 | China | SHENZHEN |
| 11/20/2023 | 8541290000 | TRANSISTOR MOUNTING TYPE: SMD/SMT, MINIMUM OPERATING TEMPERATURE | XXXXXXXXXX | 6000 | N/A | 11975 | Thailand | MOSCOW |
| 11/20/2023 | 8541290000 | TRANSISTOR MOUNTING TYPE: SMD/SMT, MINIMUM OPERATING TEMPERATURE | XXXXXXXXXX | 647 | N/A | 1291 | Thailand | MOSCOW |
| 11/20/2023 | 8541290000 | TRANSISTORS, EXCEPT PHOTOTRANSISTERS FOR CIVIL PURPOSE, ARE NOT WASTE, NOT SCRAP OF ELECTRICAL EQUIPMENT, AND DO NOT CONTAIN PRECIOUS METALS. NOT A MEDICAL PRODUCT, NOT FOR HOUSEHOLD USE: MOSFET TRANSISTOR, TECHNOLOGY: SI, MOUNTING TYPE: SMD/SMT, FLOOR | XXXXXXXXXX | 600 | N/A | 570 | China | SHENZHEN |
| 11/20/2023 | 8541290000 | TRANSISTORS. EXCEPT PHOTOTRANSISTERS, FOR CIVIL PURPOSE, ARE NOT WASTE, NOT SCRAP OF ELECTRICAL EQUIPMENT, DO NOT CONTAIN PRECIOUS METALS, ARE NOT MEDICAL PRODUCTS, NOT FOR HOUSEHOLD USE: MOSFET TRANSISTOR, TECHNOLOGY: SI, TYPE M MOUNTING: SMD/SMT, FLOOR | XXXXXXXXXX | 100 | N/A | 94 | China | SHENZHEN |
| 11/17/2023 | 8541290000 | TRANSISTORS CSD19536KTT. TRANSISTOR, DIRECT CONDUCTION - MIN: 329 C. ID - DC DRAIN CURRENT: 272 A MAXIMUM OPERATING TEMPERATURE: +175 °C, MINIMUM OPERATING TEMPERATURE: -55 °C, INSTALLATION TYPE: SMD/SMT MATRIX NUMBER OF CHANNELS : 1 CHANNEL POLARITY OF T | XXXXXXXXXX | 100 | N/A | 246 | China | SHENZHEN |