| 12/18/2023 | 3818009000 | PROCESSED SILICON CARBIDE CRYSTAL (BULLE) WITH DIAMETER 150 MM, POLYTYPE 4H | XXXXXXXXXX | 0 | N/A | 33037 | China | CHANGZHOU |
| 12/7/2023 | 3818009000 | PROCESSED SILICON CARBIDE CRYSTAL (BULE) 153 MM+/-0.5 MM, THICKNESS 10-25 MM, POLYTYPE 4H-N, COMPOSITION SIC 100%, COLOR BLACK. IT IS NOT A SEMICONDUCTOR DEVICE. THERE IS NO EPITAXIAL LAYER. TO PRODUCE SILICON CARBIDE CRYSTAL (SIC), PVT (PHYSICAL VAPOR DE | XXXXXXXXXX | 0 | N/A | 377141 | China | CHANGZHOU |