12/12/2023 | 8541100009 | SEMICONDUCTOR DIODES FOR INSTALLATION ON OVEN | XXXXXXXXXX | 40 | N/A | 78 | Mexico | MOSCOW |
12/12/2023 | 8541100009 | SEMICONDUCTOR DIODES FOR INSTALLATION ON OVEN | XXXXXXXXXX | 40 | N/A | 78 | Mexico | MOSCOW |
12/11/2023 | 8541100009 | DIODES DESIGNED FOR | XXXXXXXXXX | 20 | N/A | 2 | Mexico | HONG KONG |
12/11/2023 | 8541410008 | LIGHT DIODES | XXXXXXXXXX | 100 | N/A | 320 | Mexico | SHENZHEN |
12/11/2023 | 8541410008 | LIGHT DIODES | XXXXXXXXXX | 100 | N/A | 320 | Mexico | SHENZHEN |
12/11/2023 | 8541100009 | DIODES DESIGNED FOR | XXXXXXXXXX | 20 | N/A | 2 | Mexico | HONG KONG |
12/9/2023 | 8541490000 | SEMICONDUCTOR PHOTO-SENSITIVE DEVICES, INCLUDING PHOTOVALTANIC ELEMENTS. ASSEMBLED OR NOT IN MODULES, PANEL-MOUNTED OR NON-MILITARY, FOR TELECOMMUNICATIONS EQUIPMENT: | XXXXXXXXXX | 10 | N/A | 67 | Mexico | MOSCOW |
12/9/2023 | 8542399010 | ELECTRONIC INTEGRAL MONOLITHIC CIRCUITS. CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED IN A CASE, MADE ON ONE SEMICONDUCTOR CRYSTAL, INTENDED FOR INSTALLATION ON A PRINTED BOARD IN INDUSTRIAL ELECTRONICS SYSTEMS FOR CIVIL PURPOSE. THE PRODUC | XXXXXXXXXX | 2500 | N/A | 630 | Mexico | HONG KONG |
12/9/2023 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOGALVANIC | XXXXXXXXXX | 10 | N/A | 67 | Mexico | MOSCOW |
12/8/2023 | 8542399010 | ELECTRONIC INTEGRATED MONOLITHIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED WITH TERMINALS, MADE ON ONE SEMICONDUCTOR CRYSTAL. DESIGNED FOR INDUSTRIAL ELECTRONICS SYSTEMS. WITHOUT ENCRYPTION (CRYPTOGRAPHY) FUNCTIONS. PACKED IN S | XXXXXXXXXX | 36 | N/A | 1855 | Mexico | SHENZHEN |