12/15/2023 | 8542326900 | FLASH-ES PROM | XXXXXXXXXX | 7000 | N/A | 309469 | Korea | HONG KONG |
12/15/2023 | 8542326900 | FLASH-ES PROM | XXXXXXXXXX | 4000 | N/A | 176839 | Korea | HONG KONG |
12/15/2023 | 8542326900 | FLASH-ES PROM | XXXXXXXXXX | 4000 | N/A | 176839 | Korea | HONG KONG |
12/15/2023 | 8542326900 | FLASH-ES PROM | XXXXXXXXXX | 7000 | N/A | 309469 | Korea | HONG KONG |
12/8/2023 | 8542326900 | INTEGRATED MONOLITHIC CIRCUIT - ROM MEMORY MODULE OF NOR FLASH TYPE VDSF512M04RS18SS2V133. DESIGNED FOR STORING PERMANENT INFORMATION: SUBROUTINES, MICROPROGRAMS, CONSTANTS, ETC. AND DOES NOT CONTAIN ENCRYPTION AND CRYPTOGRAPHY ALGORITHMS. | XXXXXXXXXX | 3 | N/A | 20058 | China | SHENZHEN CHINA |
12/8/2023 | 8542326900 | FLASH-ES PROM WITH MEMORY CAPACITY MORE THAN 512 MIBIT: TOTAL: 20 PR.UNITS. | XXXXXXXXXX | 20 | N/A | 110 | China | MOSCOW |
12/8/2023 | 8542326900 | INTEGRATED MONOLITHIC CIRCUIT - ROM MEMORY MODULE OF NOR FLASH V TYPE | XXXXXXXXXX | 3 | N/A | 20058 | China | SHENZHEN CHINA |
12/8/2023 | 8542326900 | ELECTRONIC INTEGRATED MONOLITHIC CIRCUITS: FLASH-ES PROM, CIVIL PURPOSE: | XXXXXXXXXX | 1 | N/A | 6 | China | MOSCOW |
12/8/2023 | 8542326900 | INTEGRATED MONOLITHIC CIRCUIT - ROM MEMORY MODULE OF NOR FLASH TYPE VDSF512M04VS18EE2V133. DESIGNED FOR STORING PERMANENT INFORMATION: SUBROUTINES, MICROPROGRAMS, CONSTANTS, ETC. AND DOES NOT CONTAIN ENCRYPTION AND CRYPTOGRAPHY ALGORITHMS | XXXXXXXXXX | 10 | N/A | 20758 | China | SHENZHEN CHINA |
12/8/2023 | 8542326900 | INTEGRATED MONOLITHIC CIRCUIT - ROM MEMORY MODULE OF NOR FLASH V TYPE | XXXXXXXXXX | 10 | N/A | 20758 | China | SHENZHEN CHINA |