12/18/2023 | 8542324500 | ELECTRONIC INTEGRATED CIRCUITS, STORAGE DEVICES, SRAM, MODEL IS6 | XXXXXXXXXX | 135 | N/A | 443 | Philippines | SHENEEJEENEE |
12/18/2023 | 8542324500 | INTEGRATED MONOLITHIC CIRCUITS, DESIGNED FOR | XXXXXXXXXX | 20 | N/A | 31 | United States | SHENZHEN |
12/18/2023 | 8542324500 | ELECTRONIC INTEGRATED CIRCUIT RAM (Random Access Memory) WITH | XXXXXXXXXX | 2 | N/A | 305 | China | BEIJING |
12/18/2023 | 8542324500 | ELECTRONIC INTEGRATED CIRCUITS, STORAGE DEVICES, SRAM, MODEL IS6 | XXXXXXXXXX | 135 | N/A | 443 | Philippines | SHENEEJEENEE |
12/18/2023 | 8542324500 | INTEGRATED CIRCUIT (STATIC RANDOM RANGE STORAGE DEVICES | XXXXXXXXXX | 3 | N/A | 139 | China | MOSCOW |
12/18/2023 | 8542324500 | INTEGRATED MONOLITHIC CIRCUITS. DESIGNED FOR | XXXXXXXXXX | 5 | N/A | 12 | China | MOSCOW |
12/18/2023 | 8542324500 | INTEGRATED MONOLITHIC CIRCUITS, DESIGNED FOR | XXXXXXXXXX | 2010 | N/A | 3155 | China | MOSCOW |
12/18/2023 | 8542324500 | INTEGRATED CIRCUIT (STATIC RANDOM RANGE STORAGE DEVICES | XXXXXXXXXX | 3 | N/A | 139 | China | MOSCOW |
12/18/2023 | 8542324500 | MONOLITHIC INTEGRAL CIRCUIT D | XXXXXXXXXX | 30 | N/A | 10608 | China | GUANGZHOU |
12/18/2023 | 8542324500 | ELECTRONIC INTEGRATED CIRCUITS, STORAGE DEVICES, SRAM WITH MEMORY VOLUME | XXXXXXXXXX | 504 | N/A | 144704 | China | ШЭНЬЧЖЭНЬ |