| 12/18/2023 | 8542326900 | INTEGRATED MONOLITHIC CIRCUITS, DESIGNED FOR | XXXXXXXXXX | 500 | N/A | 503 | Korea | SHENZHEN | 
| 12/12/2023 | 8542326900 | INTEGRATED MONOLITHIC CIRCUITS. DESIGNED FOR | XXXXXXXXXX | 20 | N/A | 31 | Malaysia | SHENZHEN | 
| 12/12/2023 | 8542326900 | INTEGRATED MONOLITHIC CIRCUITS. DESIGNED FOR | XXXXXXXXXX | 20 | N/A | 31 | Malaysia | SHENZHEN | 
| 12/11/2023 | 8542326900 | ELECTRONIC INTEGRATED MONOLITHIC CHIPS - MEMORY DEVICES | XXXXXXXXXX | 7 | N/A | 105 | Japan | HONG KONG | 
| 12/11/2023 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCHIPRES - MEMORY USER | XXXXXXXXXX | 7 | N/A | 105 | Japan | HONG KONG | 
| 12/8/2023 | 8542326900 | INTEGRATED MONOLITHIC CIRCUIT - ROM MEMORY MODULE OF NOR FLASH TYPE VDSF512M04RS18SS2V133. DESIGNED FOR STORING PERMANENT INFORMATION: SUBROUTINES, MICROPROGRAMS, CONSTANTS, ETC. AND DOES NOT CONTAIN ENCRYPTION AND CRYPTOGRAPHY ALGORITHMS. | XXXXXXXXXX | 3 | N/A | 20058 | China | SHENZHEN CHINA | 
| 12/8/2023 | 8542326900 | ELECTRONIC INTEGRATED MONOLITHIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED WITH TERMINALS, MADE ON ONE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. WITHOUT ENCRYPTION (CRYPTOGRAPHY) FUNCTIONS. PACKED IN S | XXXXXXXXXX | 20 | N/A | 355 | Thailand | SHENZHEN | 
| 12/8/2023 | 8542326900 | ELECTRONIC INTEGRATED MONOLITHIC CIRCUITS CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS). ASSEMBLED, WITH TERMINATIONS, MADE ON ONE SEMICONDUCTOR CRYSTAL, DESIGNED FOR INDUSTRIAL ELECTRONICS SYSTEMS. WITHOUT ENCRYPTION (CRYPTOGRAPHY) FUNCTIONS. PACKED I | XXXXXXXXXX | 15 | N/A | 164 | China | SHENZHEN | 
| 12/8/2023 | 8542326900 | INTEGRATED MONOLITHIC CIRCUIT - ROM MEMORY MODULE OF NOR FLASH V TYPE | XXXXXXXXXX | 3 | N/A | 20058 | China | SHENZHEN CHINA | 
| 12/8/2023 | 8542326900 | ELECTRONIC INTEGRATED MONOLITHIC CIRCUITS CONTAINING ACTIVE ELEMENTS | XXXXXXXXXX | 15 | N/A | 164 | China | SHENZHEN |