12/6/2023 | 8542327500 | MICROCIRCUIT FM24CL64B-GTR. THIS IS A MONOLITHIC INTEGRAL DIGITAL CIRCUIT. ELECTRICALLY ERASABLE, REPROGRAMMABLE, PERMANENT ROMAIN STORAGE DEVICES. IT CONTAINS ACTIVE ELEMENTS - TRANSISTORS AND PASSIVE ELEMENTS - RESISTORS, MEMORY CAPACITY IS 64 KBIT. MAD | XXXXXXXXXX | 20000 | N/A | 8818 | Thailand | SHENZHEN |
12/6/2023 | 8542327500 | MICROCIRCUIT FM24CL64B-GTR. THIS IS A MONOLITHIC INTEGRAL DIGITAL CIRCUIT | XXXXXXXXXX | 20000 | N/A | 8818 | Thailand | SHENZHEN |
12/5/2023 | 8542327500 | MONOLITHIC INTEGR MICROCIRCUIT | XXXXXXXXXX | 1200 | N/A | 216 | China | MOSCOW |
12/5/2023 | 8542327500 | MICROCHIRECT M24256-BRMN6TP. THIS IS A MONOLITHIC DIGITAL EEPROM MEMORY CIRCUIT (EEPROM) MADE USING MOS TECHNOLOGY AND DESIGNED FOR INFORMATION STORAGE IN ELECTRIC ENERGY METERS. THE MICROCIRCUIT CONSISTS OF MOSFET TRANSISTORS LOCATED ON A SILICON SUBSTRA | XXXXXXXXXX | 67500 | N/A | 7821 | China | SHENZHEN |
11/24/2023 | 8542327500 | FM24CL64B-GTR MICROCIRCUIT IS A MONOLITHIC INTEGRAL DIGITAL CIRCUIT. ELECTRICALLY ERASABLE, REPROGRAMMABLE, PERMANENT ROMAIN STORAGE DEVICES. IT CONTAINS ACTIVE ELEMENTS - TRANSISTORS AND PASSIVE ELEMENTS - RESISTORS. MEMORY CAPACITY IS 64-KBIT. MADE USIN | XXXXXXXXXX | 2500 | N/A | 1207 | Thailand | SHENZHEN |
11/3/2023 | 8542327500 | CHIP AT25DF041B-SSHN-T. THIS IS A MONOLITHIC DIGITAL CIRCUIT. MEMORY CAPACITY 4-MBIT. NON-VOLATILE MEMORY (EEPROM - ELECTRICALLY ERASABLE REPROGRAMMABLE ROM (EEPROM)). IS MADE USING MOS TECHNOLOGY AND IS DESIGNED FOR INFORMATION STORAGE IN ELECTRIC ENERGY METERS. THE MICROCIRCUIT CONSISTS OF MOSFET TRANSISTORS LOCATED ON A SILICON SUBSTRATE. USED IN CE208 ELECTRIC ENERGY METERS AS A MEMORY CIRCUIT FOR STORING INFORMATION ABOUT CONSUMED ELECTRIC ENERGY AND OTHER INFORMATION NECESSARY FOR THE METER OPERATION. AVAILABILITY OF RADIOEL. AND/OR HIGH FREQUENCY REMEDIES: NO. AVAILABILITY OF ENCRYPTION (CRYPTOGRAPHY) FUNCTIONS: NO. NOMINAL VOLTAGE (V): 1.65 - 3.6 GOODS ARE SUPPLIED FOR THE DECLARANT'S OWN NEEDS AS COMPONENTS FOR PRODUCTS MANUFACTURED BY JSC ENERGOMERA FOR CIRCULATION IN THE TERRITORY OF THE RUSSIAN FEDERATION. | XXXXXXXXXX | 44000 | N/A | 32239 | China | HONG KONG |
11/1/2023 | 8542327500 | MICROCIRCUIT AT24CM02-SSHM-T. MONOLITHIC INTEGRATED DIGITAL EEPROM 2-MBIT (262.144 X 8), IS AN ELECTRICALLY ERASABLE REPROGRAMMABLE ROMAIN ROMAIN DEVICE (EPROM), CHEMICAL MOS TECHNOLOGY. THE MICROCIRCUIT CONSISTS OF MOSFET TRANSISTORS LOCATED ON A SILICON SUBSTRATE. THE CRYSTAL OF THE MICROCIRCUIT IS PACKED IN A PLASTIC CASE 8-LEAD SOIC. FIELD OF APPLICATION: USED IN CE309 ELECTRIC ENERGY METERS FOR INFORMATION STORAGE. AVAILABILITY OF RADIOEL. AND/OR HIGH FREQUENCY MEANS: NO PRESENCE OF ENCRYPTION FUNCTIONS (CRYPTOGRAPHY): NO NOMINAL VOLTAGE (V): 1.7 - 5.5 GOODS ARE SUPPLIED FOR THE OWN NEEDS OF THE DECLARANT AS COMPONENTS OF PRODUCTS MANUFACTURED BY JSC ENERGOMERA V ON THE TERRITORY OF THE RUSSIAN FEDERATION. | XXXXXXXXXX | 10 | N/A | 26 | Philippines | SHENZHEN |