| 12/12/2023 | 8541290000 | FIELD TRANSISTOR MANUFACTURED USING HEMT TECHNOLOGY BASED ON GALLIUM NITRIDE, NOMINAL GATE LENGTH 15 µM. OUTPUT POWER 39 DBM. POWER DISPERSION: TYPE | XXXXXXXXXX | 120 | N/A | 7804 | United States | ШЭНЬЧЖЭНЬ |
| 12/12/2023 | 8541290000 | FIELD TRANSISTOR MANUFACTURED USING HEMT TECHNOLOGY BASED ON GALL NITRIDE | XXXXXXXXXX | 120 | N/A | 7804 | United States | ШЭНЬЧЖЭНЬ |
| 11/21/2023 | 6815990008 | BORON NITRIDE PRODUCTS FOR PLASMATRONS | XXXXXXXXXX | 0 | N/A | 5304 | United States | BEIJING UCT |
| 10/31/2023 | 2850002000 | HYDRIDES. NITRIDES - BORON NITRIDE (CAS No. 10043-11-5), FUNCTIONAL FILLER SUPPLIED AS RAW MATERIALS FOR THE PRODUCTION OF COSMETICS NOT PACKED FOR RETAIL SALE, NOT WASTE | XXXXXXXXXX | 0 | N/A | 3270 | United States | MOSCOW |