| 12/18/2023 | 6804225000 | ABRASIVE WHEELS SIZE 500*305*63MM FROM ELBOR (CUBIC BORON NITRIDE) | XXXXXXXXXX | 0 | N/A | 3467 | China | SHANGHAI |
| 12/18/2023 | 3818009000 | SEMICONDUCTOR EPITAXIAL STRUCTURES OF GALLIUM NITRIDE LAYERS (CHEM.FOR | XXXXXXXXXX | 0 | N/A | 198452 | China | MOSCOW |
| 12/18/2023 | 6804225000 | ABRASIVE WHEELS SIZE 500*305*63MM FROM ELBOR (CUBIC BORON NITRIDE) | XXXXXXXXXX | 0 | N/A | 3467 | China | SHANGHAI |
| 12/15/2023 | 2850002000 | TITANIUM NITRIDE POWDER, INDUSTRIAL | XXXXXXXXXX | 0 | N/A | 448 | China | MOSCOW |
| 12/15/2023 | 2850002000 | CUBIC BORON NITRIDE (CBN) POWDER - AMBER YELLOW CV POWDER | XXXXXXXXXX | 0 | N/A | 4036 | China | MOSCOW |
| 12/15/2023 | 2850002000 | CUBIC BORON NITRIDE (CBN) POWDER - AMBER YELLOW CV POWDER | XXXXXXXXXX | 0 | N/A | 4036 | China | MOSCOW |
| 12/15/2023 | 2850002000 | TITANIUM NITRIDE POWDER, INDUSTRIAL | XXXXXXXXXX | 0 | N/A | 448 | China | MOSCOW |
| 12/12/2023 | 8541290000 | FIELD TRANSISTOR MANUFACTURED USING HEMT TECHNOLOGY BASED ON GALLIUM NITRIDE, NOMINAL GATE LENGTH 15 µM. OUTPUT POWER 39 DBM. POWER DISPERSION: TYPE | XXXXXXXXXX | 120 | N/A | 7804 | United States | ШЭНЬЧЖЭНЬ |
| 12/12/2023 | 8541290000 | FIELD TRANSISTOR MANUFACTURED USING HEMT TECHNOLOGY BASED ON GALL NITRIDE | XXXXXXXXXX | 120 | N/A | 7804 | United States | ШЭНЬЧЖЭНЬ |
| 12/11/2023 | 8541410008 | LIGHT EMITTING DIODES (LED) ARE BLUE GLOW SEMICONDUCTOR CRYSTALS BASED ON GALLIUM NITRIDE (GAN), MOUNTED AND WELDED ON A SPECIAL SUBSTRATE. SEALED WITH A SILICONE-PHOSPHOR MIXTURE OF YELLOW COLOR, THE PRODUCTS ARE INTENDED FOR USE AS A WHITE RADIATION SOU | XXXXXXXXXX | 150 | N/A | 19 | N/A | NA |