Latest Russia Import Data of Gate value under HS Code 8541290000

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HS Code

8541290000(25)

Country

Port of Unloading

DATE	HS CODE	PRODUCT DESCRIPTION	EXPORTER	QUANTITY	UNIT	TOTAL VALUE USD	ORIGIN COUNTRY	PORT OF UNLOADING
12/12/2023	8541290000	FIELD TRANSISTOR MANUFACTURED USING HEMT TECHNOLOGY BASED ON GALLIUM NITRIDE, NOMINAL GATE LENGTH 15 µM. OUTPUT POWER 39 DBM. POWER DISPERSION: TYPE	XXXXXXXXXX	120	N/A	7804	United States	ШЭНЬЧЖЭНЬ
12/8/2023	8541290000	SEMICONDUCTOR DEVICES: INSULATED GATE BIPOLAR TRANSISTOR (IGBT), FOR USE IN GREEN ENERGY C65/C200 TURBOGENERATOR	XXXXXXXXXX	3	N/A	12142	United States	VAN NUYS
12/7/2023	8541290000	IGBT POWER MODULE (INSULATED GATE BIPOLAR TRANSISTOR). REVERSE VOLTAGE MAX. 1700V	XXXXXXXXXX	3	N/A	3604	Germany	SHANGHAI
12/5/2023	8541290000	SEMICONDUCTOR TRANSISTORS (BIPOLAR), WITH INSULATED GATE	XXXXXXXXXX	15000	N/A	92831	China	SHENZHEN
12/4/2023	8541290000	FIELD TRANSISTOR MODEL FQU13N06LTU POWER DISSIPATION 60 W TYPE: N-CHANNEL. TECHNICAL CHARACTERISTICS: TYPE OF INSTALLATION: SMD/SMT SURFACE, CASE: TO-220. DRAIN SOURCE VOLTAGE: 100 V, GATE SOURCE VOLTAGE: +/- 20 V, CONTINUOUS DRAIN CURRENT: 15 A DRAIN SOU	XXXXXXXXXX	100	N/A	6	Thailand	SHENZHEN
12/4/2023	8541290000	TRANSISTORS OTHER THAN PHOTOTRANSISTERS: PRODUCT CATEGORY: INSULATED GATE BIPOLAR TRANSISTOR (IGBT) MODULES COLLECTOR-EMITER SATURATION VOLTAGE: 1.75 V, NOT MILITARY PURPOSE, NOT ELECTRICAL SCRAP	XXXXXXXXXX	727	N/A	1441	Thailand	HONG KONG
12/3/2023	8541290000	INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN HOUSING, GD300HFX170C2S INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN HOUSING, CONSISTS OF 2 ISOLATED GATE BIPOLAR TRANSISTORS, 2 DIODES, BACK TOGETHER CONNECTED TO THE TRANSISTORS TO PROTECT THE LATTER FROM DAMAG	XXXXXXXXXX	600	N/A	52505	China	MOSCOW
12/2/2023	8541290000	IGBT MODULE (BIPOLAR TRANSISTOR WITH SEMICONDUCTOR GATE), FOR USE IN ELECTRICAL SYSTEMS OF INDUSTRIAL EQUIPMENT TOTAL 11 PCS ART:	XXXXXXXXXX	11	N/A	717	China	SUIFENHE
11/30/2023	8541290000	INSULATED GATE TRANSISTOR. USED IN SOVR	XXXXXXXXXX	1400	N/A	76582	Malaysia	SHENZHEN
11/20/2023	8541290000	TRANSISTORS EXCEPT PHOTOTRANSISTERS: PRODUCT CATEGORY: MOSFET CONTINUOUS LEAKAGE CURRENT: 2.7 A DRAIN-SOURCE RESISTANCE: 90 MOHMS GATE-SOURCE VOLTAGE: - 12 V, + 12 V POWER DISSIPPER: 960 MW, NON-MILITARY NATIONAL PURPOSES, NOT SCRAP ELECTRICAL EQUIPMENT	XXXXXXXXXX	2	N/A	3	Malaysia	HONG KONG

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Exim Trade Data provides 100% genuine and the latest Import data of Gate value under HS code 8541290000 Russia. We collect Import data of Gate value under HS code 8541290000 with product anddate.Import data of Gate value under HS code 8541290000 Russia helps to analyze Import price, companyname, port, importer and exporter, product description, quantity, market trends, and many other datapoints.International Trade data of a country helps the global exporters and importers to do analysis and marketresearch to find local suppliers and buyers in that country.

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