12/18/2023 | 8542326100 | FLASH-ES PROM WITH | XXXXXXXXXX | 3 | N/A | 20 | China | HONG KONG |
12/18/2023 | 8542326100 | FLASH-ES PROM WITH MEMORY CAPACITY NOT MORE THAN | XXXXXXXXXX | 150 | N/A | 16 | China | SheremetyevO |
12/18/2023 | 8542326100 | FLASH-ES PROM WITH | XXXXXXXXXX | 18 | N/A | 110 | China | HONG KONG |
12/18/2023 | 8542326100 | FLASH-ES PROM WITH VOLUME | XXXXXXXXXX | 1500 | N/A | 1726 | China | GUANGZHOU |
12/18/2023 | 8542326100 | INTEGRATED MONOLITHIC ANALOG FLASH MEMORY CIRCUIT WITH MEMORY CAPACITY | XXXXXXXXXX | 1364 | N/A | 16067 | China | ШЭНЬЧЖЭНЬ |
12/18/2023 | 8542326100 | INTEGRATED MONOLITHIC CIRCUITS, FLASH-ES PROM CIRCUIT WITH MEMORY CAPACITY 25 | XXXXXXXXXX | 150 | N/A | 461 | China | SHENZHEN |
12/18/2023 | 8542326100 | INTEGRATED MONOLITHIC CIRCUITS, FLASH-ES PROM CIRCUIT WITH MEMORY CAPACITY 25 | XXXXXXXXXX | 150 | N/A | 461 | China | SHENZHEN |
12/12/2023 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC CHIPS - FLASH ES PROM WITH A VOLUME OF NO MORE THAN 512 MIBITS, DO NOT CONTAIN CRYPTOGRAPHIC MODULES AND ARE NOT ENCRYPTION MEANS: | XXXXXXXXXX | 21 | N/A | 90 | United States | SHENZHEN |
12/11/2023 | 8542326100 | ELECTRICAL DIAGRAMS INTEGRATED MONOLITHIC: RESISTANT STORAGE DEVICE FLASH-ES PROM, SERIAL CONFIGURATION FLASH MEMORY 16 MBIT, DESIGNED FOR 3D INSTALLATION ON THE BOARD IN PRINTED CIRCUITS. NOT SCRAP, FOR RADIO ELECTRONICS INDUSTRY, THE GOODS ARE GENERAL C | XXXXXXXXXX | 7 | N/A | 67 | Philippines | KOWLOON |
12/9/2023 | 8542326100 | FLASH-ES PROM WITH MEMORY CAPACITY NOT MORE THAN 512 MIBIT: TOTAL: 6 PR.UNITS. | XXXXXXXXXX | 6 | N/A | 7 | China | MOSCOW |