| 12/7/2023 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH POWER DISSIPATION LESS THAN 1 W, FOR INSTALLATION ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | XXXXXXXXXX | 3200 | N/A | 98 | Malaysia | SHENZHEN |
| 12/7/2023 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH POWER DISSIPATION LESS THAN 1 W, FOR INSTALLATION ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | XXXXXXXXXX | 78 | N/A | 77 | Malaysia | SHENZHEN |
| 12/7/2023 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH POWER DISSIPATION LESS THAN 1 W, FOR INSTALLATION ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | XXXXXXXXXX | 26 | N/A | 5 | Malaysia | SHENZHEN |
| 12/6/2023 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH POWER DISSIPATION LESS THAN 1 W, FOR INSTALLATION ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | XXXXXXXXXX | 392 | N/A | 643 | Japan | XIAN |
| 12/6/2023 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH POWER DISSIPATION LESS THAN 1 W, FOR INSTALLATION ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | XXXXXXXXXX | 50 | N/A | 8 | China | XIAN |
| 12/5/2023 | 8541210000 | TRANSISTORS, EXCEPT PHOTOTRANSISTERS WITH POWER DISSIPATION LESS THAN 1 W, ARE NOT ELECTRICAL EQUIPMENT SCRAP, CIVIL. PURPOSE, USED AS COMPONENTS, NOT INTENDED FOR INDEPENDENT USE, NOT CREATED. ELECTRIC MAGNET, INTERFERENCE | XXXXXXXXXX | 18300 | N/A | 177 | China | SHENZHEN |
| 12/4/2023 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH POWER DISSIPATION LESS THAN 1 W, FOR INSTALLATION ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | XXXXXXXXXX | 3000 | N/A | 345 | Germany | MOSCOW |
| 12/4/2023 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH POWER DISSIPATION LESS THAN 1 W, FOR INSTALLATION ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | XXXXXXXXXX | 1 | N/A | 2085 | China | SHENZHEN |
| 12/2/2023 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH POWER DISSIPATION LESS THAN 1 W, FOR INSTALLATION ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | XXXXXXXXXX | 538 | N/A | 13 | United States | HONG KONG |
| 12/2/2023 | 8541210000 | SEMICONDUCTOR TRANSISTORS WITH POWER DISSIPATION LESS THAN 1 W, FOR INSTALLATION ON PRINTED BOARDS, FOR USE IN RADIO ELECTRONIC EQUIPMENT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | XXXXXXXXXX | 9 | N/A | 0 | United States | HONG KONG |