| 12/10/2023 | 8541210000 | MOSFET TRANSISTORS IN THE FORM OF MICROCIRCUITS. FOR SURFACE MOUNTING ON PRINTED BOARDS, WITH POWER DISSIPATION LESS THAN 1 W, GENERAL INDUSTRIAL USE FOR POWER DISTRIBUTION IN UNITS OF RADIO ELECTRONIC PRODUCTS, NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT FOR | XXXXXXXXXX | 300 | N/A | 184 | Germany | SHENZHEN |
| 12/9/2023 | 8541210000 | TRANSISTORS, EXCEPT PHOTOTRANSISTERS WITH POWER DISSIPATION OF LESS THAN 1 W, FOR CIVIL PURPOSE, FOR INSTALLATION ON PRINTED BOARDS, ARE NOT WASTE, NOT SCRAP OF ELECTRICAL EQUIPMENT. DO NOT CONTAIN PRECIOUS METALS, ARE NOT A MEDICAL PRODUCT, NOT FOR HOUSE | XXXXXXXXXX | 200 | N/A | 6 | China | SHENZHEN |
| 12/8/2023 | 8541210000 | BIPOLAR TRANSISTOR POWER DISSIPPER 310 MW, DESIGNED FOR USE IN TELECOMMUNICATION EQUIPMENT FOR SURFACE MOUNTING ON A BOARD, NOT USED IN FIRE AUTOMATIC EQUIPMENT, NOT ELECTRICAL EQUIPMENT SCRAP | XXXXXXXXXX | 350 | N/A | 3 | China | SHENZHEN |
| 12/8/2023 | 8541210000 | TRANSISTORS WITH POWER DISSIPATION LESS THAN 1W FOR WIDE APPLICATION IN THE PRODUCTION OF INDUSTRIAL EQUIPMENT, NON-MILITARY EQUIPMENT AND CONSUMER ELECTRONICS (NOT SCRAP OF ELECTRICAL EQUIPMENT). IT IS NOT A SPECIAL TECHNICAL TOOL FOR SECRET COLLECTION A | XXXXXXXXXX | 100 | N/A | 36 | China | SHENZHEN |
| 12/8/2023 | 8541210000 | BIPOLAR TRANSISTOR POWER DISSIPPER 0.33 W, INTENDED FOR USE IN TELECOMMUNICATIONS EQUIPMENT FOR SURFACE MOUNTING ON A BOARD, NOT USED IN FIRE AUTOMATIC EQUIPMENT. NOT SCRAP ELECTRICAL EQUIPMENT | XXXXXXXXXX | 5 | N/A | 0 | China | SHENZHEN |
| 12/7/2023 | 8541210000 | TRANSISTOR, IS AN ELECTRONIC DEVICE MADE OF SEMICONDUCTOR MATERIAL, USUALLY WITH THREE TERMINALS, ALLOWING INPUT SIGNALS TO CONTROL CURRENT IN AN ELECTRICAL CIRCUIT, USED FOR Amplification, POWER DISSIPPER 0.022 WATT, GENERATION AND CONVERSION OF ELECTRIC | XXXXXXXXXX | 120 | N/A | 94 | China | SHENZHEN |
| 12/7/2023 | 8541210000 | MICROELECTRONIC COMPONENT FOR GENERAL INDUSTRIAL PURPOSE FOR THE PRODUCTION OF ELECTRICAL EQUIPMENT: BIPOLAR TRANSISTOR, WITH PNP STRUCTURE, WITH THE FUNCTION OF CONTROLLING CURRENT PARAMETERS IN THE ELECTRIC CIRCUIT; MADE IN SOT-223 CASE (4 CONTACTS) FOR | XXXXXXXXXX | 11000 | N/A | 598 | China | SHENZHEN |
| 12/6/2023 | 8541210000 | TRANSISTOR. NOT FOR MILITARY PURPOSE. NOT ELECTRICAL EQUIPMENT SCRAP. USED AS A COMPONENT OF INDUSTRIAL ELECTRONICS | XXXXXXXXXX | 69000 | N/A | 529 | China | SHENZHEN |
| 12/6/2023 | 8541210000 | TRANSISTOR IS AN ELECTRONIC DEVICE MADE OF SEMICONDUCTOR MATERIAL, USUALLY WITH THREE TERMINALS. ALLOWING INPUT SIGNALS TO CONTROL CURRENT IN AN ELECTRICAL CIRCUIT, USED FOR Amplification, POWER DISSIPATION 0.35 WATT, GENERATION AND CONVERSION OF ELECTRIC | XXXXXXXXXX | 45000 | N/A | 331 | China | SHENZHEN |
| 12/6/2023 | 8541210000 | TRANSISTORS, EXCEPT PHOTOTRANSISTERS WITH POWER DISSIPATION LESS THAN 1 W/NOT SCRAP ELECTRICAL EQUIPMENT, NOT DUAL PURPOSE, DOES NOT CONTAIN DRUGS. METALS,/ | XXXXXXXXXX | 50 | N/A | 2 | Philippines | SHENZHEN |