12/18/2023 | 8542323900 | ELECTRONIC INTEGRATED CIRCUITS - DYNAMIC OPERATIONAL STORAGE | XXXXXXXXXX | 4 | N/A | 288 | China | HONGKONG |
12/18/2023 | 8542323900 | DYNAMIC RAM STORAGE DEVICES (DOSES) WITH MEMORY CAPACITY B | XXXXXXXXXX | 20005 | N/A | 11706 | China | SHENCHJEEN |
12/18/2023 | 8542323900 | ELECTRONIC INTEGRATED CIRCUITS - DYNAMIC OPERATIONAL STORAGE | XXXXXXXXXX | 4 | N/A | 186 | China | HONGKONG |
12/14/2023 | 8542323900 | DYNAMIC RAM STORAGE DEVICES (DOSES) WITH A MEMORY CAPACITY MORE THAN 512 MBIT. MEMORY CAPACITY - 4GB. FIELD OF APPLICATION: ELECTRONICS PRODUCTION, DOES NOT CONTAIN ENCRYPTION FUNCTIONS AND CRYPTOGRAPHIC ALGORITHMS. | XXXXXXXXXX | 15360 | N/A | 21989 | Korea | ШЕНЬЧЖЕНЬ |
12/14/2023 | 8542323900 | DYNAMIC RAM STORAGE DEVICES (DOSES) WITH VOLUME | XXXXXXXXXX | 15360 | N/A | 21989 | Korea | ШЕНЬЧЖЕНЬ |
12/13/2023 | 8542323900 | ELECTRONIC INTEGRATED MONOLITHIC CHICKCIRCUITS - DYNAMIC O | XXXXXXXXXX | 20 | N/A | 145 | United States | SHENZHEN |
12/11/2023 | 8542323900 | DYNAMIC OPERATIONS | XXXXXXXXXX | 1 | N/A | 2 | China | HONG KONG |
12/9/2023 | 8542323900 | DYNAMIC OPERATIONS | XXXXXXXXXX | 2 | N/A | 20 | Malaysia | MOSCOW |
12/9/2023 | 8542323900 | DYNAMIC RAM STORAGE DEVICES (DOSES) WITH A MEMORY CAPACITY MORE THAN 512 MIBIT: TOTAL: 2PR.UNITS. | XXXXXXXXXX | 2 | N/A | 20 | Malaysia | MOSCOW |
12/8/2023 | 8542323900 | ELECTRONIC INTEGRATED MONOLITHIC CIRCUITS: DYNAMIC OPERATIONAL STORAGE DEVICES: | XXXXXXXXXX | 100 | N/A | 461 | China | MOSCOW |