12/18/2023 | 8542323900 | DYNAMIC RAM STORAGE DEVICES (DOSES) WITH MEMORY CAPACITY B | XXXXXXXXXX | 20005 | N/A | 11706 | China | SHENCHJEEN |
12/14/2023 | 8542323900 | DYNAMIC RAM STORAGE DEVICES (DOSES) WITH A MEMORY CAPACITY MORE THAN 512 MBIT. MEMORY CAPACITY - 4GB. FIELD OF APPLICATION: ELECTRONICS PRODUCTION, DOES NOT CONTAIN ENCRYPTION FUNCTIONS AND CRYPTOGRAPHIC ALGORITHMS. | XXXXXXXXXX | 15360 | N/A | 21989 | Korea | ШЕНЬЧЖЕНЬ |
12/14/2023 | 8542323900 | DYNAMIC RAM STORAGE DEVICES (DOSES) WITH VOLUME | XXXXXXXXXX | 15360 | N/A | 21989 | Korea | ШЕНЬЧЖЕНЬ |
12/9/2023 | 8542323900 | DYNAMIC RAM STORAGE DEVICES (DOSES) WITH A MEMORY CAPACITY MORE THAN 512 MIBIT: TOTAL: 2PR.UNITS. | XXXXXXXXXX | 2 | N/A | 20 | Malaysia | MOSCOW |
12/7/2023 | 8542323900 | DYNAMIC RAM STORAGE DEVICES (DOSE) WITH A MEMORY CAPACITY MORE THAN 512 MIBIT, NOT FOR MILITARY PURPOSE: | XXXXXXXXXX | 547 | N/A | 2354 | China | HONGKONG |
12/7/2023 | 8542323900 | INTEGRATED MONOLITHIC CIRCUIT, MEMORY, DYNAMIC RAM | XXXXXXXXXX | 216 | N/A | 1740 | United States | MOSCOW |
12/6/2023 | 8542323900 | DYNAMIC RAM STORAGE DEVICES (DOSES) | XXXXXXXXXX | 7 | N/A | 101 | China | BEIJING |
12/6/2023 | 8542323900 | DYNAMIC RAM STORAGE DEVICES (DOSES) WITH A MEMORY CAPACITY MORE THAN 512 MIBITS, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) MEANS. NOT SCRAP. FIELD OF APPLICATION TELECOM EQUIPMENT: | XXXXXXXXXX | 7 | N/A | 101 | China | BEIJING |
12/6/2023 | 8542323900 | DYNAMIC RAM STORAGE DEVICES (DOSE) WITH A MEMORY CAPACITY MORE THAN 512 MIBIT | XXXXXXXXXX | 260 | N/A | 298 | China | MOSCOW |
12/4/2023 | 8542323900 | DYNAMIC RAM STORAGE DEVICES (DOSE) WITH A MEMORY CAPACITY MORE THAN 512 MIBIT | XXXXXXXXXX | 40 | N/A | 424 | China | MOSCOW DOMODEDOVO AIRPORT |