1/25/2024 | 8541100009 | SILICON DIODES, EPITAXIAL-PLANAR, DIFFUSION AND EPITAXIAL-DIFFUSION, FOR CONVERTING AC VOLTAGE, FOR INDUSTRIAL APPLICATION: | XXXXXXXXXX | 3 | ШТ | 118.31 | United Arab Emirates | GMOSCOW |
1/25/2024 | 8541100009 | DIODES (STABILITRONS) SILICON, ALLOY AND EPITAXIAL, FOR VOLTAGE STABILIZATION IN RADIOELECTRONIC EQUIPMENT, WORKING AMBIENT TEMPERATURE RANGE FROM -60 TO +125 °C, FOR INDUSTRIAL USE: | XXXXXXXXXX | 3 | ШТ | 16.04 | United Arab Emirates | GMOSCOW |
1/22/2024 | 8541100009 | DIODES (STABILITRONS) SILICON AND DIODE MATRICES, FOR VOLTAGE STABILIZATION, FOR USE IN CURRENT SWITCHES AND PULSE CIRCUITS, FOR INDUSTRIAL APPLICATIONS: | XXXXXXXXXX | 3 | ШТ | 5382.31 | United Arab Emirates | GMOSCOW |
1/15/2024 | 8541100009 | SCHOTTKY DIODE CRYSTALS. PLATES CUT INTO CRYSTALS. SILICON SEMICONDUCTOR DEVICE. INTENDED FOR USE IN ELECTRICAL AND ELECTRONIC HOUSEHOLD EQUIPMENT: SCHOTTKY DIODES UNPACKAGED ШПАК.757644.012 TU: "KD269D6" (AG) - 45275 | XXXXXXXXXX | 2 | ШТ | 26985.56 | China | SHENZHEN |
12/27/2023 | 8541100009 | DIODES. MATERIAL IS SILICON. OPERATING TEMPERATURE 125 DEGREES. C. APPLY | XXXXXXXXXX | 0 | 0 | 22401.24 | China | BEIJING |
12/26/2023 | 8541100009 | SILICON DIODES. DIFFUSION, MAXIMUM REVERSE | XXXXXXXXXX | 0 | 0 | 6.97 | United Arab Emirates | MOSCOW |
12/25/2023 | 8541100009 | SILICON DIODES, DIFFUSION. FOR CONVERSION | XXXXXXXXXX | 0 | 0 | 105.05 | United Arab Emirates | MOSCOW |
12/22/2023 | 8541100009 | DIODE MODULE. MATERIAL-SILICON, OPERATING TEMPERATURE 125 DEG.S., P | XXXXXXXXXX | 0 | 0 | 13549.37 | India | MOSCOW |
12/22/2023 | 8541100009 | DIODE MODULE. MATERIAL-SILICON, OPERATING TEMPERATURE 125 DEG.S., P | XXXXXXXXXX | 0 | 0 | 13549.37 | India | MOSCOW |
12/21/2023 | 8541100009 | DIODES. MATERIAL IS SILICON. OPERATING TEMPERATURE 125 DEG. C., APPLY | XXXXXXXXXX | 0 | 0 | 33603.08 | India | MUMBAI |