| 1/26/2024 | 8541410009 | SEMICONDUCTOR LASER DIODE FB-M1470-2000HF, NOT FOR MILITARY USE, NOT SCRAP ELECTRICAL EQUIPMENT, DOES NOT CONTAIN SOURCES OF IONIZING RADIATION. | XXXXXXXXXX | 1 | ШТ | 22138.85 | Hong Kong | MOSCOW |
| 12/22/2023 | 8541410009 | SEMICONDUCTOR LASER DIODE FB-M1470-20 | XXXXXXXXXX | 0 | 0 | 27600 | Hong Kong | MOSCOW |
| 12/22/2023 | 8541410009 | SEMICONDUCTOR LASER DIODE FB-M1470-20 | XXXXXXXXXX | 0 | 0 | 27600 | Hong Kong | MOSCOW |
| 10/31/2023 | 8541410009 | SEMICONDUCTOR LASER DIODE FB-M1450-1500TO3, NOT FOR MILITARY PURPOSE, NOT ELECTRICAL EQUIPMENT SCRAP, DOES NOT CONTAIN SOURCES OF IONIZING RADIATION | XXXXXXXXXX | 0 | 0 | 505 | Hong Kong | MOSCOW |
| 10/31/2023 | 8541410009 | SEMICONDUCTOR LASER DIODE FB-M1470-2000HF. NOT FOR MILITARY PURPOSE. NOT SCRAP ELECTRICAL EQUIPMENT, DOES NOT CONTAIN SOURCES OF IONIZING RADIATION | XXXXXXXXXX | 0 | 0 | 15532 | Hong Kong | MOSCOW |
| 9/15/2023 | 8541410009 | SEMICONDUCTOR LASER DIODE FB-M1470-2000HF, NOT FOR MILITARY PURPOSE, NOT ELECTRICAL EQUIPMENT SCRAP, DOES NOT CONTAIN SOURCES OF IONIZING RADIATION | XXXXXXXXXX | 0 | 0 | 28080 | China | MOSCOW |
| 9/1/2023 | 8541410009 | LASER DIODE RADIATION AMPLIFIERS. NOT SCRAP. NO WASTE. NOT MILITARY, NOT DUAL USE. | XXXXXXXXXX | 0 | 0 | 4800 | China | BEIJING |
| 8/17/2023 | 8541410009 | SEMICONDUCTOR MULTIMODE FABRY-PEROT LASER DIODE CENTRAL WAVELENGTH 1930 NM, OUTPUT POWER 300 MW. HHL CASE WITH MULTIMODE OUTPUT | XXXXXXXXXX | 0 | 0 | 786 | China | MOSCOW |
| 8/1/2023 | 8541410009 | SEMICONDUCTOR LASER DIODE FB-S1060-20SOT148. NOT FOR MILITARY PURPOSE, NOT SCRAP OF ELECTRICAL EQUIPMENT. DOES NOT CONTAIN SOURCES OF IONIZING RADIATION | XXXXXXXXXX | 0 | 0 | 130 | China | MOSCOW |
| 8/1/2023 | 8541410009 | SEMICONDUCTOR LASER DIODE FB-S1060-20SOT148. NOT FOR MILITARY PURPOSE, NOT SCRAP OF ELECTRICAL EQUIPMENT. DOES NOT CONTAIN SOURCES OF IONIZING RADIATION | XXXXXXXXXX | 0 | 0 | 130 | China | MOSCOW |