3/28/2024 | 85412900 | (P610487) TRANSISTOR RFD TRAN GaN Doh 2110-2170MHz 85W | XXXXXXXXXX | 1000 | PCS | 27647 | CHINA | CHENNAI AIR |
3/28/2024 | 85412900 | (P596687)TRANSISTOR-RFD GaN TRAN 2.3-2.4GHZ 550W RF GaN transistor for Evaluation Platforms , 2.3-2.4GHz 550W | XXXXXXXXXX | 200 | PCS | 5225.82 | CHINA | CHENNAI AIR |
3/28/2024 | 85412900 | (P596687)TRANSISTOR-RFD GaN TRAN 2.3-2.4GHZ 550W RF GaN transistor for Evaluation Platforms , 2.3-2.4GHz 550W | XXXXXXXXXX | 100 | PCS | 2612.91 | CHINA | CHENNAI AIR |
3/28/2024 | 85412900 | (P596687)TRANSISTOR-RFD GaN TRAN 2.3-2.4GHZ 550W RF GaN transistor for Evaluation Platforms , 2.3-2.4GHz 550W | XXXXXXXXXX | 100 | PCS | 2612.91 | CHINA | CHENNAI AIR |
3/28/2024 | 85412900 | (P596687)TRANSISTOR-RFD GaN TRAN 2.3-2.4GHZ 550W RF GaN transistor for Evaluation Platforms , 2.3-2.4GHz 550W | XXXXXXXXXX | 200 | PCS | 5225.82 | CHINA | CHENNAI AIR |
3/23/2024 | 85412900 | STN0214 Bipolar Transistors - BJT Bipolar Transistors - BJTVery High Volt NPN 1400V 200mA PWR Tran(Transistors) | XXXXXXXXXX | 5 | NOS | 3.68 | USA | BANGALORE AIR |
3/21/2024 | 85412900 | E015A0001401 MOS TUBE (TRANSISTOR) TRAN,PMOS,CJ2305,VDS -12V,ID -4.1A,RDS 45MR,VGS ?8V,SOT- (FOR CAPTIVE CONSUMPTION) | XXXXXXXXXX | 90000 | NOS | 1477.73 | CHINA | DELHI AIR |
3/21/2024 | 85412900 | E015A0014901 MOS TUBE (TRANSISTOR) TRAN,2SK3019,SOT-523,X,GP,JESTEK (FOR CAPTIVE CONSUMPTION) | XXXXXXXXXX | 579000 | NOS | 4253.21 | CHINA | DELHI AIR |
3/21/2024 | 85412900 | E015A0024801 TRIODE (TRANSISTOR) TRAN,NPN,MMBT3904T,VCE 60V,IC 200MA,X,X,SOT-523,X,GP,S, (FOR CAPTIVE CONSUMPTION) | XXXXXXXXXX | 93000 | NOS | 624.19 | CHINA | DELHI AIR |
3/21/2024 | 85412900 | E015A0002801 MOS TUBE (TRANSISTOR) TRAN,NMOS,BLM8205B,VDS 20V,ID 6A,RDS 22MR,VGS ?12V,SOT (FOR CAPTIVE CONSUMPTION) | XXXXXXXXXX | 168000 | NOS | 4597.37 | CHINA | DELHI AIR |