| 3/29/2024 | 85412900 | VW2X60-14IO1 Discrete Semiconductor Modules 60 Amps 1400V(Discrete Semiconductor Modules) | XXXXXXXXXX | 3 | NOS | 101.46 | USA | BANGALORE AIR |
| 3/29/2024 | 85412900 | TRANSISTOR-NTMFS002N10MCLT1G DISCRETE | XXXXXXXXXX | 500 | NOS | 313.62 | CHINA | DELHI AIR |
| 3/29/2024 | 85412900 | TRANSISTOR-NTMFS002N10MCLT1G DISCRETE | XXXXXXXXXX | 10000 | NOS | 6272.43 | CHINA | DELHI AIR |
| 3/27/2024 | 85412900 | 1301BEY01000N IPD90N10S4L-06 DISCRETE/POWER MOS FET/INFINEONTECHNOLOGIES (TRANSISTOR) | XXXXXXXXXX | 5000 | PCS | 4058 | MALAYSIA | SAHAR AIR |
| 3/22/2024 | 85412900 | IRLB4132PBF (IRLB4132PBF) INFINEON DISCRETE (MOSFET) (FOR CAPTIVE CONSUMPTION) | XXXXXXXXXX | 10000 | NOS | 2161.65 | CHINA | DELHI AIR |
| 3/22/2024 | 85412900 | IRLB4132PBF (IRLB4132PBF) INFINEON DISCRETE (MOSFET) (FOR CAPTIVE CONSUMPTION) | XXXXXXXXXX | 30000 | NOS | 6484.95 | CHINA | DELHI AIR |
| 3/21/2024 | 85412900 | ETR1020012 BCV 49 H6327 Discrete/Small Signal FET/Infineon Technologies (TRANSISTOR)(ELECTRONIC COMPONENTS) | XXXXXXXXXX | 2000 | NOS | 234.05 | SINGAPORE | SAHAR AIR |
| 3/21/2024 | 85412900 | ETR1020012 BCV 49 H6327 Discrete/Small Signal FET/Infineon Technologies (TRANSISTOR)(ELECTRONIC COMPONENTS) | XXXXXXXXXX | 13000 | NOS | 1521.3 | SINGAPORE | SAHAR AIR |
| 3/20/2024 | 85412900 | TRANSISTOR - IPB180N08S4-02 Discrete/Power MOS FET - BO09603676 | XXXXXXXXXX | 29000 | NOS | 39343.23 | MALAYSIA | SAHAR AIR |
| 3/15/2024 | 85412900 | NVMTS0D4N04CLTXG ONSEMI DISCRETE (MOSFET) | XXXXXXXXXX | 1000 | PCS | 4881.17 | MALAYSIA | SAHAR AIR |