3/30/2024 | 85423200 | DRAM DRAM DDR3 4G 256MX16 FBGA | XXXXXXXXXX | 6 | NOS | 63.08 | USA | HYDERABAD AIR |
3/29/2024 | 85423200 | SM38D55740 MEMORY IC MEM,LPDDR4X,2GB,CXDB4CBAM-MK-A (BRAND MOTOROLA) (FOR MFG. OF PCBA FOR MOBILE PHONE) (CAPTIVE CONSUM | XXXXXXXXXX | 1 | NOS | 2.89 | CHINA | DELHI AIR |
3/29/2024 | 85423200 | MEMORY,RAM-W634GU6NB11W(COO-( Electronics components for Automotive Industries) | XXXXXXXXXX | 10640 | NOS | 43485.95 | JAPAN | AHEMDABAD AIR |
3/29/2024 | 85423200 | SM38D16082 MEM,LPDDR,2GB,K4U6E3S4AB-MGCL (MEMORY IC (INTEGRATED CIRCUIT)) (FOR MANUFACTURING OF PCBA OF MOTOROLA MOBILE | XXXXXXXXXX | 27 | NOS | 75.13 | CHINA | DELHI AIR |
3/29/2024 | 85423200 | LFIALC1AB251370003*IC MT41K128M16JT 125 K 2G DDR3 FBGA 1.35 | XXXXXXXXXX | 4 | PCS | 10.73 | TAIWAN | CHENNAI AIR |
3/29/2024 | 85423200 | MEMORY,RAM-W634GU6NB11W(COO-( Electronics components for Automotive Industries) | XXXXXXXXXX | 10640 | NOS | 43485.95 | JAPAN | AHEMDABAD AIR |
3/29/2024 | 85423200 | MEMORY,RAM-W634GU6NB11W(COO-( Electronics components for Automotive Industries) | XXXXXXXXXX | 1520 | NOS | 6212.28 | JAPAN | AHEMDABAD AIR |
3/29/2024 | 85423200 | MEMORY,RAM-W634GU6NB11W(COO-( Electronics components for Automotive Industries) | XXXXXXXXXX | 9120 | NOS | 37273.67 | JAPAN | AHEMDABAD AIR |
3/29/2024 | 85423200 | SM38D51839 MEM,LPDDR4X,2GB,FLXC2002G-C4 (IC (INTEGRATED CIRCUIT)) (FOR MANUFACTURING OF PCBA OF MOTOROLA MOBILE PHONE) | XXXXXXXXXX | 9 | NOS | 25.9 | CHINA | DELHI AIR |
3/29/2024 | 85423200 | MEMORY,RAM-W634GU6NB11W(COO-( Electronics components for Automotive Industries) | XXXXXXXXXX | 1520 | NOS | 6212.28 | JAPAN | AHEMDABAD AIR |