2/28/2024 | 85423200 | 64GLPDDR4XODP MEMORY IC (P/N: K4UCE3Q4AB-MGCL000 / 000010) | XXXXXXXXXX | 25 | PCS | 509.32 | south korea | HYDERABAD AIR |
2/28/2024 | 85423200 | 64GLPDDR4XODP MEMORY IC (P/N: K4UCE3Q4AB-MGCL000 / 000010) | XXXXXXXXXX | 25 | PCS | 509.32 | south korea | HYDERABAD AIR |
2/28/2024 | 85423200 | 64GLPDDR4XODP MEMORY IC (P/N: K4UCE3Q4AB-MGCL000 / 000010) | XXXXXXXXXX | 25 | PCS | 509.32 | south korea | HYDERABAD AIR |
12/21/2023 | 85423200 | 1105-003137 IC-DDR5 SDRAM K3LK7K70BM-BGCPTEX,BGA,496 (IC MEMORY FOR SAMSUNG MANUFACTURING) 85 | XXXXXXXXXX | 60000 | PCS | 1635448.25 | South Korea | DELHI ACC |
12/20/2023 | 85423200 | 1108-000745I IC-MEMORY MEMORY,MT29VZZZCDA1SKPR-046 W.181 (ICMEMORY FOR SAMSUNG MANUFACTURING) 85 | XXXXXXXXXX | 22000 | PCS | 449176.54 | South Korea | DELHI ACC |
12/20/2023 | 85423200 | 1108-000728I IC-MEMORY MEMORY,MT29VZZZBD91SLSM-046 W.17X (ICMEMORY FOR SAMSUNG MANUFACTURING) 85 | XXXXXXXXXX | 16000 | PCS | 191703.78 | South Korea | DELHI ACC |
12/19/2023 | 85423200 | 1108-000722I IC-MEMORY MEMORY,KM8F9001JM-B813,FBGA,254P, (ICMEMORY FOR SAMSUNG MANUFACTURING) 85 | XXXXXXXXXX | 60000 | PCS | 1624223.21 | South Korea | DELHI ACC |
12/19/2023 | 85423200 | 1105-003137 IC-DDR5 SDRAM K3LK7K70BM-BGCPTEX,BGA,496 (IC MEMORY FOR SAMSUNG MANUFACTURING) 85 | XXXXXXXXXX | 80000 | PCS | 2180949.22 | South Korea | DELHI ACC |
12/19/2023 | 85423200 | 1108-000712I IC-MEMORY MEMORY,KMDC6001DM-B625,FBGA,254P, (ICMEMORY FOR SAMSUNG MANUFACTURING) 85 | XXXXXXXXXX | 154000 | PCS | 1792546.26 | South Korea | DELHI ACC |
12/17/2023 | 85423200 | 1108-000722I IC-MEMORY,KM8F9001JM-B813,FBGA,254P, (IC MEMORYFOR SAMSUNG MANUFACTURING) 85 | XXXXXXXXXX | 1500 | PCS | 40605.58 | South Korea | DELHI ACC |