1/31/2024 | 85412900 | MITSUBISHI SEMICONDUCTOR (PI33500143)CM400DXP-24T#203G INR | MITSUBISHI ELECTRIC CORPORATION | 195 | NOS | 7203.06 | JAPAN | N/A |
1/31/2024 | 85412900 | MOSFET N-CH 60V 250MA SST3 - ETRA00167AE USD | RABYTE PTE LTD | 24000 | NOS | 391.29 | JAPAN | N/A |
1/31/2024 | 85412900 | 400/4500V 8.4KVISO DUAL DIODE MDM400H45E2 TC3EH-236399R4540 EUR | HITACHI EUROPE LTD | 24 | PCS | 9195.34 | JAPAN | N/A |
1/31/2024 | 85412900 | 1000A/3300V SINGLE IGBT MODULE MBN1000E33E2 TC3EST000218-7077 EUR | HITACHI EUROPE LTD | 80 | PCS | 30019.39 | JAPAN | N/A |
1/31/2024 | 85412900 | MOSFET PCPOWER H -45V -7A RSS07 - EICS00332AE USD | RABYTE PTE LTD | 20000 | NOS | 7642.32 | JAPAN | N/A |
1/31/2024 | 85412900 | MITSUBISHI SEMICONDUCTOR (PI33500083)CM150DXD-24A#202G INR | MITSUBISHI ELECTRIC CORPORATION | 30 | NOS | 793.48 | JAPAN | N/A |
1/31/2024 | 85412900 | 400/4500V 8.4KVISO DUAL DIODE MDM400H45E2 TC3EH-236399R4540 EUR | HITACHI EUROPE LTD | 18 | PCS | 6896.51 | JAPAN | N/A |
1/31/2024 | 85412900 | MITSUBISHI SEMICONDUCTOR (PI23500187), CM1400DUC-24S#301G EUR | MITSUBISHI ELECTRIC CORPORATION | 3 | NOS | 729.74 | JAPAN | N/A |
1/31/2024 | 85412900 | 1000A 1700V HALF-BRIDGE IGBT MBM1000FS17GP2 -BT TC100800439 EUR | HITACHI EUROPE LTD | 54 | PCS | 16979.27 | JAPAN | N/A |
1/31/2024 | 85412900 | MOSFET Small Signal Transistor Automotive - ETRA00019AE USD | RABYTE PTE LTD | 159000 | NOS | 2624.68 | JAPAN | N/A |