3/30/2024 | 85411000 | DIODE 4385926 | HITACHI CONSTRUCTION MACHINERY ASIA AND PACIFIC PT | 2 | PCS | 42.46 | JAPAN | JNPT/ NHAVA SHEVA SEA |
3/28/2024 | 85411000 | [7321-9823-30] [DIODE ASS'Y] (PARTS FOR WIRING HARNESS) | YAZAKI CORPORATION., | 300 | PCS | 92.63 | JAPAN | JNPT/ NHAVA SHEVA SEA |
3/28/2024 | 85411000 | [7321-9823-30] [DIODE ASS'Y] (PARTS FOR WIRING HARNESS) | YAZAKI CORPORATION., | 400 | PCS | 123.51 | JAPAN | JNPT/ NHAVA SHEVA SEA |
3/28/2024 | 85411000 | [7321-9823-30] [DIODE ASS'Y] (PARTS FOR WIRING HARNESS) | YAZAKI CORPORATION., | 2000 | PCS | 617.55 | JAPAN | JNPT/ NHAVA SHEVA SEA |
3/28/2024 | 85411000 | [7321-9823-30] [DIODE ASS'Y] (PARTS FOR WIRING HARNESS) | YAZAKI CORPORATION., | 36000 | PCS | 11115.95 | JAPAN | JNPT/ NHAVA SHEVA SEA |
3/13/2024 | 85412900 | INSULATED GATE BIPOLAR TRANSISTOR 4MBI300VG-120R-57 (18 PCS) | FUJI ELECTRIC CO. LTD. | 18 | NOS | 786.38 | JAPAN | JNPT/ NHAVA SHEVA SEA |
3/13/2024 | 85412900 | INSULATED GATE BIPOLAR TRANSISTOR 1MBI3600VD-170E-E (6 PCS) | FUJI ELECTRIC CO. LTD. | 6 | NOS | 2148.31 | JAPAN | JNPT/ NHAVA SHEVA SEA |
3/13/2024 | 85412900 | INSULATED GATE BIPOLAR TRANSISTOR 4MBI340VF-120R-50(18 PCS) (COMM. INV NO. FEIB6S-U240126_S-2 DTD. 26.01.24) | FUJI ELECTRIC CO. LTD. | 18 | NOS | 1189.13 | JAPAN | JNPT/ NHAVA SHEVA SEA |
3/13/2024 | 85412900 | INSULATED GATE BIPOLAR TRANSISTOR 4MBI340VF-120R-50(18 PCS) (COMM. INV NO. FEIB6S-U240126_S-2 DTD. 26.01.24) | FUJI ELECTRIC CO. LTD. | 18 | NOS | 1189.13 | JAPAN | JNPT/ NHAVA SHEVA SEA |
3/13/2024 | 85412900 | INSULATED GATE BIPOLAR TRANSISTOR 4MBI340VF-120R-50(18 PCS) (COMM. INV NO. FEIB6S-U240126_S-2 DTD. 26.01.24) | FUJI ELECTRIC CO. LTD. | 18 | NOS | 1189.13 | JAPAN | JNPT/ NHAVA SHEVA SEA |