9/22/2023 | 38180010 | SILICON WAFER ,4" DIA .,P-TYPE,100 RES:0.005-0.001 OHM.CM,SSP,EPI GRADE THICKNESS:525UM (DETAILS AS PER INVOICE) | XXXXXXXXXX | 25 | NOS | 301.35 | USA | HONG KONG |
9/22/2023 | 38180010 | SILICON WAFER ,4" DIA .,N-TYPE,100 RES:0.005-0.001 OHM.CM,SSP,EPI GRADE THICKNESS:525UM (DETAILS AS PER INVOICE) | XXXXXXXXXX | 25 | NOS | 301.35 | USA | HONG KONG |
9/22/2023 | 38180010 | SILICON WAFER ,4" DIA .,P-TYPE,111 RES:0.005-0.001 OHM.CM,SSP,EPI GRADE THICKNESS:525UM (DETAILS AS PER INVOICE) | XXXXXXXXXX | 50 | NOS | 602.7 | USA | HONG KONG |