3/30/2024 | 38180090 | SEMICONDUCTOR WAFER (PROCESSED) SAMPLE: GA2O3 WITH ACCESSORIES (FOR RESEARCH USE ONLY) P.O.NO. 4300004932 | XXXXXXXXXX | 1 | SET | 4383.38 | JAPAN | BANGALORE AIR |
3/24/2024 | 38180090 | 3INCH HPSI SIC WAFER | XXXXXXXXXX | 100 | PCS | 33394.53 | JAPAN | DELHI AIR |
3/13/2024 | 38180010 | 4 INCH SILICON WAFER | XXXXXXXXXX | 25 | NOS | 302.6 | JAPAN | BANGALORE AIR |
3/13/2024 | 38180010 | 4 INCH SILICON WAFER | XXXXXXXXXX | 25 | NOS | 277.38 | JAPAN | BANGALORE AIR |
3/13/2024 | 38180010 | 4 INCH SILICON WAFER | XXXXXXXXXX | 50 | NOS | 554.77 | JAPAN | BANGALORE AIR |
3/13/2024 | 38180010 | 4 INCH SILICON WAFER | XXXXXXXXXX | 50 | NOS | 605.2 | JAPAN | BANGALORE AIR |
2/28/2024 | 38180090 | RESEARCH LABORATORY MATERIALS SUBSTRATE OF SINGLE CRYSTAL TS10544 SO#120273959 | XXXXXXXXXX | 50 | NOS | 3137.39 | JAPAN | BOMBAY AIR CARGO |
2/24/2024 | 38180090 | 4INCH WAFER THICKNESS: 600UM +/- 15UM | XXXXXXXXXX | 25 | NOS | 371 | JAPAN | DELHI AIR |
2/24/2024 | 38180090 | 4INCH WAFER THICKNESS: 525UM +/- 25UM | XXXXXXXXXX | 25 | NOS | 396.59 | JAPAN | DELHI AIR |
2/24/2024 | 38180090 | 4INCH WAFER THICKNESS: 525UM +/- 25UM | XXXXXXXXXX | 50 | NOS | 511.72 | JAPAN | DELHI AIR |