12/17/2023 | 8473302008 | ELECTRONIC DDR (DOUBLE DAAT RATE) RAM MEMORY MODULES, REPRESENTED | XXXXXXXXXX | 0 | N/A | 32730 | China | SHEZNHEN |
12/17/2023 | 8473302008 | ELECTRONIC DDR (DOUBLE DAAT RATE) RAM MEMORY MODULES, REPRESENTED | XXXXXXXXXX | 0 | N/A | 32730 | China | SHEZNHEN |
12/9/2023 | 8471500000 | SINGLE-MODULE SYSTEM (SOM) FPGA BASED ON PROGRAMMABLE LOGIC INTEGRATIVE CIRCUIT OF THE "XILINX" TRADEMARK MODEL XC7Z030-1SBG485I. THE MODULE HAS 1 GB DDR3L SDRAM, 32 MB QSPI FLASH MEMORY. OPERATING SUPPLY VOLTAGE 3.3 V, BOARD SIZE 4 CM X5 CM, OPERATING TE | XXXXXXXXXX | 150 | N/A | 60375 | Germany | HONG KONG |
12/8/2023 | 8542329000 | INTEGRATED MONOLITHIC CIRCUIT - DDR3 SDRAM VD RAM MEMORY MODULE | XXXXXXXXXX | 6 | N/A | 43840 | China | SHENZHEN CHINA |
12/8/2023 | 8542329000 | INTEGRATED MONOLITHIC CIRCUIT - RAM MEMORY MODULE TYPE DDR3 SDRAM VD3D16G16VB96IB2WH, DESIGNED FOR STORING VARIABLE INFORMATION: PROGRAMS AND NUMBERS REQUIRED FOR CURRENT COMPUTATIONS AND DOES NOT CONTAIN ALGORITHMS ENFORCEMENT AND CRYPTOGRAPHY | XXXXXXXXXX | 6 | N/A | 43840 | China | SHENZHEN CHINA |
11/28/2023 | 8542323900 | ELECTRONIC INTEGRATED CIRCUIT, MEMORY (DYNAMIC RAM DEVICE (DOSAGE) WITH MEMORY CAPACITY 2 GBIT) TECHNICAL CHARACTERISTICS: TYPE OF MOUNTING: SMD (SURFACE MOUNT) CASE: FBGA-84 TYPE OF OPERATION MEMORY: DDR2 SDRAM CHIP DENSITY: 2 GBIT ORGANIZATION: 128МХ16 | XXXXXXXXXX | 150 | N/A | 889 | Singapore | SHENZHEN |
11/26/2023 | 8537109100 | CONTROLLER IS PROGRAMMABLE, SPECIALIZED, INDUSTRIAL, PC COMPATIBLE. DESIGNED FOR CONTROL OF TECHNOLOGICAL PROCESSES IN INDUSTRY AND OTHER COMPLEX TECHNOLOGICAL OBJECTS, INCLUDED WITH: X86-COMPATIBLE RDC (DUALCORE) R3600 1.00 GHz PROCESSOR, 2 GB DDR RAM 3 | XXXXXXXXXX | 0 | N/A | 5549 | China | SAINT PETERSBURG |
11/23/2023 | 8542323100 | SYNCHRONOUS DYNAMIC MEMORY (SDRAM) ELECTRONIC INTEGRATED DIGITAL CHIPS. COLLECTED, WITH CONCLUSIONS; DESIGNED FOR INSTALLATION ON PRINTED BOARDS OF COMPUTER EQUIPMENT, INDUSTRIAL ELECTRONICS EQUIPMENT, MEMORY CAPACITY 1GBIT. NOT USED IN NAVIGATION AND SAT | XXXXXXXXXX | 200 | N/A | 897 | China | HONG KONG |
11/23/2023 | 8542319090 | CIRCUIT ELECTRONIC INTEGRATED MODEL TPS51116PWP, TYPE: PWM MEMORY POWER CONTROLLER DDR, DDR-2, DDR-3. TECHNICAL PARAMETERS CASE HTSSOP20 INSTALLATION TYPE SMD/SMT. INPUT VOLTAGE FROM 3 V TO 28 V, NUMBER OF OUTPUTS 1 OUTPUT OPERATING SUPPLY CURRENT 800 μA, | XXXXXXXXXX | 8 | N/A | 2 | China | SHENZHEN |
11/21/2023 | 8473302008 | ELECTRONIC DATA STORAGE SYSTEMS MODULES: DDR RAM MODULE. WITHOUT ENCRYPTION (CRYPTOGRAPHY) FUNCTIONS. NOT FOR MILITARY PURPOSE. ONLY 330PCS. | XXXXXXXXXX | 0 | N/A | 4607 | China | SUIFENHE |