1/15/2024 | 8541300009 | OTHER THYRISTORS, DYNISTORS AND THRINISTORS, EXCEPT PHOTO-SENSITIVE DEVICES. CRYSTALS ON WAFERS: ММВТ6027 - 92277 (ON 14 WAFERS) ARE SILICON WAFERS OF 76 MM DIAMETER WITH CRYSTALS THAT ARE SEMI-FINISHED PRODUCTS FOR MANUFACTURING | XXXXXXXXXX | 1 | ШТ | 16191.04 | USA | MOSCOW |
1/12/2024 | 8541300009 | THYRISTORS. MATERIAL - SILICON. OPERATING TEMPERATURE <125 DEG.C., MAXIMUM RATE OF GROWTH OF THE UNLOCKING CURRENT <2000 A/MKS. USED IN SEMICONDUCTOR ELECTRIC POWER CONVERTERS, AS WELL AS IN POWER CIRCUITS OF ELECTRICAL DEVICESINDUSTRY | XXXXXXXXXX | 1 | ШТ | 4307.45 | India | NEW DELHI |
1/10/2024 | 8541300009 | THYRISTORS. MATERIAL - SILICON. OPERATING TEMPERATURE <125 DEG.C., MAXIMUM RATE OF GROWTH OF THE UNLOCKING CURRENT <2000A/MKS. USED IN SEMICONDUCTOR ELECTRIC POWER CONVERTERS, AS WELL AS IN POWER CIRCUITS OF ELECTRICAL DEVICES | XXXXXXXXXX | 1 | ШТ | 4307.45 | India | NEW DELHI |
12/27/2023 | 8541300009 | THYRISTORS, SILICON MATERIAL. OPERATING TEMPERATURE 125 DEG.S., MAXI | XXXXXXXXXX | 0 | 0 | 1515.09 | China | BEIJING |
12/25/2023 | 8541300009 | THYRISTORS. MATERIAL IS SILICON. OPERATING TEMPERATURE 125 DEG.S., MAXIMA | XXXXXXXXXX | 0 | 0 | 97700 | United Arab Emirates | MOSCOW |
12/24/2023 | 8541300009 | THYRISTORS 10 W, NOT SCRAP ELECTRIC | XXXXXXXXXX | 0 | 0 | 12.74 | Uzbekistan | TASHKENT |
12/24/2023 | 8541300009 | THYRISTORS 10 W, NOT SCRAP ELECTRIC | XXXXXXXXXX | 0 | 0 | 12.74 | Uzbekistan | TASHKENT |
12/20/2023 | 8541300009 | THYRISTORS. DINISTORS | XXXXXXXXXX | 0 | 0 | 74302.77 | India | MOSCOW |
12/20/2023 | 8541300009 | THYRISTORS. DINISTORS | XXXXXXXXXX | 0 | 0 | 74302.77 | India | MOSCOW |
12/19/2023 | 8541300009 | THYRISTORS. MATERIAL IS SILICON. OPERATING TEMPERATURE 125 DEG.S., MAXIMA | XXXXXXXXXX | 0 | 0 | 52080 | India | MOSCOW |