| 3/30/2024 | 85412900 | SEECI-FT-STP3N-LF#&Non-photosensitive semiconductor components (transistors, power loss >1W) | XXXXXXXXXX | 1000 | PCE | 1366 | China | NA |
| 3/30/2024 | 85412900 | SEECI-FT-STP3N-LF#&Non-photosensitive semiconductor components (transistors, power loss >1W) | XXXXXXXXXX | 1200 | PCE | 1639.2 | China | NA |
| 3/30/2024 | 85412900 | SEECI-FT-STP3N-LF#&Non-photosensitive semiconductor components (transistors, power loss >1W) | XXXXXXXXXX | 1000 | PCE | 1366 | China | NA |
| 3/30/2024 | 85412900 | SEECI-FT-STP3N-LF#&Non-photosensitive semiconductor components (transistors, power loss >1W) | XXXXXXXXXX | 1000 | PCE | 1366 | China | NA |
| 3/30/2024 | 85412100 | 12-PM514B-00B#&MOSFET-SMD N 20V 3A 0.7V 0.062OHM 0.7W 2 Transistors, voltage 20V, size 12x9mm, voltage on/off function, energy dissipation rate below 0.7W, 100% new materials production TV | XXXXXXXXXX | 3000 | PCE | 66.9 | China | NA |
| 3/30/2024 | 85412900 | SEECI-FT-STP3N-LF#&Non-photosensitive semiconductor components (transistors, power loss >1W) | XXXXXXXXXX | 1000 | PCE | 1366 | China | NA |
| 3/30/2024 | 85412900 | SEECI-FT-STP3N-LF#&Non-photosensitive semiconductor components (transistors, power loss >1W) | XXXXXXXXXX | 1150 | PCE | 1570.9 | China | NA |
| 3/30/2024 | 85412900 | SEECI-FT-STP3N-LF#&Non-photosensitive semiconductor components (transistors, power loss >1W) | XXXXXXXXXX | 1400 | PCE | 1912.4 | China | NA |
| 3/30/2024 | 85412900 | SEECI-FT-STP3N-LF#&Non-photosensitive semiconductor components (transistors, power loss >1W) | XXXXXXXXXX | 1000 | PCE | 1366 | China | NA |
| 3/30/2024 | 85412900 | SEECI-FT-STP3N-LF#&Non-photosensitive semiconductor components (transistors, power loss >1W) | XXXXXXXXXX | 1000 | PCE | 1366 | China | NA |